TDF8553J datasheet(22/47 Pages) NXP

22 / 47 page

TDF8553J_1

Objective data sheet

Rev. 01 — 3 December 2008

22 of 47

NXP Semiconductors

TDF8553J

× 50 Watt power ampliﬁer and multiple voltage regulator

[1]

Human body model: Rs = 1.5 kΩ; C = 100 pF; all pins have passed all tests to 2500 V to guarantee 2000 V, according to class II.

[2]

Machine model: Rs =10 Ω; C = 200 pF; L = 0.75 mH; all pins have passed all tests to 250 V to guarantee 200 V, according to class II.

10. Thermal characteristics

10.1 Quality speciﬁcation

In accordance with

“General Quality Speciﬁcation for Integrated Circuits SNW-FQ-611D”.

VP(r)

reverse supply voltage

voltage regulator only

−18

Ptot

total power dissipation

Tcase =70 °C

junction temperature

150

°C

Tstg

storage temperature

−55

+150

°C

Tamb

ambient temperature

−40

+85

°C

Vesd

electrostatic discharge voltage

[1] -

2000

[2] -

200

Table 14.

Limiting values …continued

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Table 15.

Thermal characteristics

Symbol

Parameter

Conditions

Typ

Unit

Rth(j-a)

thermal resistance from junction

to ambient

in free air

K/W

Rth(j-c)

thermal resistance from junction

to case

see Figure 11

0.75

K/W

Fig 11. Equivalent thermal resistance network

mdb514

Amplifier

0.5 K/W

0.2 K/W

1 K/W

Voltage regulator

Virtual junction

Case

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