H838532H datasheet(163/508 Pages) RENESAS

163 / 508 page

Section 6 ROM

Rev. 1.00 May 30, 2008 Page 143 of 484

REJ09B0436-0100

The FLMCR1, FLMCR2, and EBR settings are retained, however program mode or erase mode is

aborted at the point at which the error occurred. Program mode or erase mode cannot be re-entered

by re-setting the P or E bit. However, PV and EV bit setting is enabled, and a transition can be

made to verify mode. Error protection can be cleared only by a power-on reset.

6.7

Programmer Mode

In programmer mode, a PROM programmer can be used to perform programming/erasing via a

socket adapter, just as a discrete flash memory. Use a PROM programmer that supports the MCU

device type with the on-chip Renesas Technology (former Hitachi Ltd.) 64-Kbyte flash memory

(F-ZTAT64V3). A 10-MHz input clock is required. For the conditions for transition to

programmer mode, see table 6.3.

6.7.1

Socket Adapter

The socket adapter converts the pin allocation of the flash memory device to that of the discrete

flash memory HN28F101. The address of the on-chip flash memory is H'0000 to H'EFFF. Figure

6.6 shows a socket-adapter-pin correspondence diagram.

6.7.2

Programmer Mode Commands

The following commands are supported in programmer mode.

• Memory Read Mode

• Auto-Program Mode

• Auto-Erase Mode

• Status Read Mode

Status polling is used for auto-programming, auto-erasing, and status read modes. In status read

mode, detailed internal information is output after the execution of auto-programming or auto-

erasing. Table 6.9 shows the sequence of each command. In auto-programming mode, 129 cycles

are required since 128 bytes are written at the same time. In memory read mode, the number of

cycles depends on the number of address write cycles (n).

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