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November 2007
Datasheet
Order Number: 306666-11
27
P30
6.2
DC Voltage Characteristics
IPPE
VPP Erase Current
0.05
0.10
0.05
0.10
mA
VPP = VPPL, erase in progress
822
8
22
VPP = VPPH, erase in progress
Notes:
1.
All currents are RMS unless noted. Typical values at typical VCC, TC = +25 °C.
2.
ICCS is the average current measured over any 5 ms time interval 5 µs after CE# is deasserted.
3.
Sampled, not 100% tested.
4.
ICCES is specified with the device deselected. If device is read while in erase suspend, current is ICCES plus ICCR.
5.
ICCW, ICCE measured over typical or max times specified in Section 7.5, “Program and Erase
Characteristics” on page 39.
Table 13: DC Voltage Characteristics
Sym
Parameter
CMOS Inputs
(VCCQ = 1.7 V – 3.6 V)
TTL Inputs (1)
(VCCQ = 2.4 V – 3.6 V)
Unit
Test Condition
Notes
Min
Max
Min
Max
VIL
Input Low Voltage
0
0.400.6
V
2
VIH
Input High Voltage
VCCQ – 0.4 V
VCCQ
2.0
VCCQ
V
VOL
Output Low Voltage
-
0.1
-
0.1
V
VCC = VCCMin
VCCQ = VCCQMin
IOL = 100 µA
VOH
Output High Voltage
VCCQ – 0.1
-
VCCQ – 0.1
-
V
VCC = VCCMin
VCCQ = VCCQMin
IOH = –100 µA
VPPLK
VPP Lock-Out Voltage
-
0.4
-
0.4
V
3
VLKO
VCC Lock Voltage
1.0
-
1.0
-
V
VLKOQ
VCCQ Lock Voltage
0.9
-
0.9
-
V
Notes:
1.
Synchronous read mode is not supported with TTL inputs.
2.
VIL can undershoot to –0.4 V and VIH can overshoot to VCCQ + 0.4 V for durations of 20 ns or less.
3.
VPP ≤ VPPLK inhibits erase and program operations. Do not use VPPL and VPPH outside their valid ranges.
Table 12: DC Current Characteristics (Sheet 2 of 2)
Sym
Parameter
CMOS
Inputs
(VCCQ =
1.7 V - 3.6
V)
TTL Inputs
(VCCQ =
2.4 V - 3.6
V)
Unit
Test Conditions
Notes
Typ
Max
Typ
Max



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