EMC646SP16JS-55LF datasheet(29/65 Pages) EMLSI

29 / 65 page

EMC646SP16J

4Mx16 CellularRAM

Preliminary

Electrical Characteristics

Table 9: Absolute Maximum Ratings

Stresses greater than those listed may cause permanent damage to the device.

This is a stress rating only, and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not

implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

Table 10: Electrical Characteristics and Operating Conditions

Wireless Temperature (-30°C < TC < +85°C)

Note:

1. Input signals may overshoot to VccQ + 1.0V for periods less than 2ns during transitions.

2. Input signals may undershoot to Vss - 1.0V for periods less than 2ns during transitions.

3. BCR[5:4] = 01b (default setting of one-half drive strength).

4. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add the current required to drive output

capacitance expected in the actual system.

5. ISB (max) values measured with PAR set to FULL ARRAY and at +85°C. In order to achieve low standby current, all inputs must be driven to

either VccQ or Vss. ISB might be slightly higher for up to 500ms after power-up, or when entering standby mode.

6. ISB (typ) is the average ISB at 25°C and Vcc = VccQ = 1.8V. This parameter is verified during characterization, and is not 100% tested.

Parameter

Rating

Voltage to any pin except Vcc, VccQ relative to Vss

-0.30V to VccQ + 0.3V

Voltage on Vcc supply relative to Vss

-0.2V to +2.45V

Voltage on VccQ supply relative to Vss

-0.2V to +2.45V

Storage temperature (plastic)

-55°C to +150°C

Operating temperature (case) Wireless

-30°C to +85°C

Soldering temperature and time 10s (solder ball only)

+260°C

Description

Conditions

Symbol

Min

Max

Unit

Note

Supply voltage

Vcc

1.7

1.95

I/O supply voltage

VccQ

1.7

1.95

Input high voltage

VIH

VccQ - 0.4

VccQ + 0.2

Input low voltage

VIL

-0.20

0.4

Output high voltage

IOH = -0.2mA

VOH

0.80 VccQ

Output low voltage

IOL = +0.2mA

VOL

0.20 VccQ

Input leakage current

VIN = 0 to VccQ

ILI

µA

Output leakage current

OE# = VIH or chip disabled

ILO

µA

Operating current

Conditions

Symbol

Typ

Max

Unit

Note

Asynchronous random

READ/WRITE

VIN = VccQ or 0V chip enabled, IOUT = 0

ICC1

70ns

Asynchronous

PAGE READ

ICC1P

70ns

Initial access

burst READ/WRITE

ICC2

104MHz

83MHz

66MHz

Continuous burst READ

ICC3R

104MHz

83MHz

66MHz

Continuous burst WRITE

ICC3W

104MHz

83MHz

66MHz

Standby current

VIN = VccQ or 0V, CE# = VccQ

ISB

Standard

180

µA

5, 6

Low Power

160

µA

LowLowPower

140

µA

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