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ST92F120JR9T bảng dữ liệu(PDF) 296 Page - STMicroelectronics |
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ST92F120JR9T bảng dữ liệu(HTML) 296 Page - STMicroelectronics |
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296 / 320 page ![]() 296/320 ST92F120 - ELECTRICAL CHARACTERISTICS FLASH / EEPROM SPECIFICATIONS (VDD =5V ± 10%, TA = –40°C to +105°C, unless otherwise specified) (1) Note: (1) The full range of characteristics will be available after final product characterisation. (2) Relationship computation between EEPRO M sector cycling and single byte cycling is provided in a dedicated STMicroelectronics Appli- cation Note (ref. AN1102/98). FLASH / EEPROM DC & AC CHARACTERISTICS (VDD =5V ± 10%, TA = –40°C to +105°C, unless otherwise specified) Note: (1) Below the min value the FLASH / EEPROM can never be written; above the max value FLASH/EEPROM can always be writ ten. (2) Below the min value the FLASH / EEPROM can never be read; above the max value FLASH/EEPRO M can always be read. Parameter Min Typ Max Unit MAIN FLASH Byte Program 10 1200 µs 128 kbytes Flash Program 1.3 s 64 kbytes Flash Sector Erase 1 1.5 30 s 128 kbytes Flash Chip Erase 3 s Erase Suspend Latency 15 µs EEPROM 16 bytes Page Update (1k EEPROM) 0.16 30 100 ms 16 bytes Page Update (0.5k EEPROM) 0.16 15 50 ms EEPROM Chip Erase 70 ms RELIABILITY Flash Endurance 25 °C 10000 cycles Flash Endurance -40 °C +105°C 3000 EEPROM Endurance 100000 (2) cycles / sector Data Retention 15 Years Symbol Parameter Test Conditions Min Max Unit VCWL Write Lock Supply Voltage (1) 34 V VCRL Read Lock Supply Voltage (2) 1.5 2.5 V IDD1 Supply Current (Read) VDD = 5.5 V, TA = –40°C, fINTCLK = 24 MHz 60 mA IDD2 Supply Current (Write) VDD = 5.5 V, TA =–40°C, fINTCLK = 24 MHz 60 mA IDD3 Supply Current (Stand-by) VDD = 5.5 V, TA = –40°C 100 µA IDD4 Supply Current (Power-Down) VDD = 5.5 V, TA = 105°C10 µA TPD Recovery from Power-Down VDD = 4.5 V, TA = 105°C10 µs 1 |
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