SIM689XM datasheet(8/55 Pages) SANKEN

8 / 55 page

SIM689xM Series

SIM689xM-DSE Rev.3.4

SANKEN ELECTRIC CO., LTD.

Mar. 05, 2024

https://www.sanken-ele.co.jp/en

3.3

Thermal Resistance Characteristics

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Remarks

Junction-to-Case Thermal

Resistance(1)

RJ-C

All power MOSFETs

operating

—

3.6

°C/W

SIM6893M

SIM6891MD

SIM6891MDN

R(J-C)Q(2)

All IGBTs operating

—

3.6

°C/W

SIM6892M

SIM6895M

SIM6896M

R(J-C)F(3)

All freewheeling

diodes operating

—

4.2

°C/W

SIM6892M

SIM6895M

SIM6896M

Junction-to-Ambient

Thermal Resistance

RJ-A

All power MOSFETs

operating

—

°C/W

SIM6893M

SIM6891MD

SIM6891MDN

R(J-A)Q

All IGBTs operating

—

°C/W

SIM6892M

SIM6895M

SIM6896M

R(J-A)F

All freewheeling

diodes operating

—

°C/W

SIM6892M

SIM6895M

SIM6896M

(1) Refers to a case temperature at the measurement point described in Figure 3-1, below.

(2) Refers to steady-state thermal resistance between the junction of the built-in transistors and the case. For transient

thermal characteristics, see Section 15.2.

(3) Refers to steady-state thermal resistance between the junction of the built-in freewheeling diodes and the case.

Measurement point

5 mm

Figure 3-1.

Case Temperature Measurement Point

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