MSC81058 datasheet(1/5 Pages) STMICROELECTRONICS

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October 1992

GENERAL PURPOSE AMPLIFIER APPLICATIONS

RF & MICROWAVE TRANSISTORS

.250 2LFL (S010)

hermetically sealed

.

EMITTER BALLASTED

.

REFRACTORY/GOLD METALLIZATION

.

VSWR CAPABILITY

∞:1 @ RATED

CONDITIONS

.

HERMETIC STRIPAC® PACKAGE

.

POUT

= 10 W MIN. WITH 10 dB GAIN

@1 GHz

DESCRIPTION

The MSC81058 is a common base hermetically

sealed silicon NPN microwave transistor utilizing

a fishbone, emitter ballasted geometry with a re-

fractory/gold metallization system. This device is

capable of withstanding infinite load VSWR at any

phase angle under rated conditions.

The MSC81058 is designed for Class C amplifier

applications in the 0.4 - 1.2 GHz frequency range.

PIN CONNECTION

BRANDING

81058

ORDER CODE

MSC81058

ABSOLUTE MAXIMUM RATINGS (Tcase

= 25°C)

Symbol

Parameter

Value

Uni t

PDISS

Power Dissipation*

29

W

IC

Device Current*

1.0

A

VCC

Collector-Supply Voltage*

35

V

TJ

Junction Temperature

200

°C

TSTG

Storage Temperature

− 65 to +200

°C

RTH(j-c)

Junction-Case Thermal Resistance*

6.0

°C/W

*Applies only to rated RF amplifier operation

MSC81058

1. Collector

3. Emitter

2. Base

4. Base

THERMAL DATA

1/5

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