R5F5671CDDFM datasheet(163/179 Pages) RENESAS

163 / 179 page

R01DS0373EJ0120 Rev.1.20

Page 163 of 179

Sep 30, 2024

RX671 Group

2. Electrical Characteristics

2.12

Flash Memory Characteristics

Note 1. Definition of program/erase cycle:

The program/erase cycle is the number of erasing for each block. When the number of program/erase cycles is n, each block

can be erased n times. For instance, when 128-byte program is performed 64 times for different addresses in 8-Kbyte block and

then the block is erased, the program/erase cycle is counted as one. However, the same address cannot be programmed more

than once before the next erase cycle (overwriting is prohibited).

Note 2. Characteristics are degraded as the number of program/erase increases. This is the minimum value of program/erase cycles to

guarantee all characteristics listed in this table.

Note 3. This shows the characteristic when the flash memory writer or self-programming library from Renesas Electronics is in use, and

the number of times programming and erasure proceed does not exceed the specified value.

Note 4. These values are based on the results of reliability testing.

Table 2.61

Code Flash Memory Characteristics

Conditions: VCC = AVCC0 = AVCC1 = VCC_USB = VBATT = 2.7 to 3.6 V, 2.7 V ≤ VREFH0 ≤ AVCC0,

VSS = AVSS0 = AVSS1 = VREFL0 = VSS_USB = 0 V,

Temperature range for programming/erasure: Ta = Topr

Item

Symbol

FCLK = 4 MHz

FCLK = 15 MHz

20 MHz ≤ FCLK ≤ 60

MHz

Unit

Test

Conditions

Min.

Typ.

Max.

Min.

Typ.

Max.

Min.

Typ.

Max.

Programming time

NPEC ≤ 100 times

128 bytes

tP128

—

0.75

13.2

—

0.38

6.6

—

0.34

8 Kbytes

tP8K

—

176

—

32 Kbytes

tP32K

—

194

704

—

352

—

320

Programming time

NPEC > 100 times

128 bytes

tP128

—

0.91

15.8

—

0.46

—

0.41

7.2

8 Kbytes

tP8K

—

212

—

106

—

32 Kbytes

tP32K

—

234

848

—

117

424

—

106

384

Erasure time

NPEC ≤ 100 times

8 Kbytes

tE8K

—

216

—

132

—

120

32 Kbytes

tE32K

—

283

864

—

173

528

—

157

480

Erasure time

NPEC > 100 times

8 Kbytes

tE8K

—

260

—

158

—

144

32 Kbytes

tE32K

—

341

1040

—

208

632

—

189

576

Reprogramming/erasure

cycle*1

NPEC

10000

—

10000

—

10000

——

Times

Suspend delay time during

programming

tSPD

—

264

—

132

—

120

µs

First suspend delay time during

erasing

(in suspend priority mode)

tSESD1

—

216

—

132

—

120

µs

Second suspend delay time

during erasure

(in suspend priority mode)

tSESD2

—

1.7

—

1.7

—

1.7

Suspend delay time during

erasure

(in erasure priority mode)

tSEED

—

1.7

—

1.7

—

1.7

Forced stop command

tFD

—

µs

Data hold time*3, *4

tDRP

—

Year Ta ≤ 85°C

—

Ta ≤ 105°C

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