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AS1170 bảng dữ liệu(PDF) 46 Page - ams-OSRAM AG |
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AS1170 bảng dữ liệu(HTML) 46 Page - ams-OSRAM AG |
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46 / 53 page ![]() AS1170 Application information Datasheet • PUBLIC • Document Feedback DS001083 • v2-00 • 2024-Feb-05 46 / 53 / 10 Application information 10.1 External components 10.1.1 Input capacitor CVIN Low ESR input capacitors reduce input switching noise and reduce the peak current drawn from the battery. Ceramic capacitors are required for input decoupling and should be located as close to the device as is practical. Table 21: Recommended input capacitor Part number C TC code Rated voltage Size Manufacturer GRM188R60J106ME47 10 µF >3 µF @ 4.5 V > 2 µF @ 5.25 V X5R 6.3 V 0603 Murata LMK107BBJ106MA 10 µF > 3 µF @ 4.5 V X5R 6.3 V 0603 Taiyo Yuden If a different input capacitor is chosen, ensure similar ESR value and at least 3 µF capacitance at the maximum input supply voltage. Larger capacitor values (C) may be used without limitations. Add a smaller capacitor in parallel to the input pin VIN (e.g. Murata GRM155R61C104, >50 nF @ 3 V, 0402 size). 10.1.2 Output capacitor CVOUT Low ESR capacitors should be used to minimize VOUT ripple. Multi-layer ceramic capacitors are recommended since they have extremely low ESR and are available in small footprints. The capacitor should be located as close to the device as is practical. X5R dielectric material is recommended due to their ability to maintain capacitance over wide voltage and temperature range. |
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