AS3418 datasheet(40/78 Pages) AMSOSRAM

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AS3418

Functional Description

Datasheet

• PUBLIC

DS000507

• v4-00 • 2020-Jan-23

│ 39

6.9.1

Parameter

VBAT =1.8V, TA= 25ºC, unless otherwise specified.

Figure 51:

VNEG Charge Pump Parameter

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VIN

Input Voltage

VBAT

1.4

1.6

1.8

VOUT

Output Voltage

VNEG

-1.8

-1

CVBAT

VBAT input

capacitor

Effective capacitive value

1.6

4.7

5.46

µF

CVNEG

VNEG output

capacitor

Effective capacitive value

3.4

µF

CFLY

Flying capacitor

Effective capacitive value

0.97

2.2

2.86

µF

6.10

EEPROM

The AS3418 features an integrated EEPROM that stores the system configuration data like

microphone gain settings and configuration of the different operation modes during power down

operation mode. Because the EEPROM is not bit addressable the AS3418 has an additional register

bank in parallel to the EEPROM that is loaded with the EEPROM content during startup of the device.

Each time AS3418 is powered up the EEPROM content is loaded to the register bank (0x00

– 0x1D)

to configure the AS3418 according to the application requirements. The registers can be accessed via

the I2C interface for embedded applications and system evaluation purpose. For non-embedded

systems were no MCU is in place to configure the device there are two dedicated production trimming

signal lines available that allow access to the AS3418 registers and upload/download function of the

EEPROM.

Figure 52:

AS3418 Register

0x00 – 0x1D

EEPROM

Memory

WRITE

READ

WRITE

READ

MODE/CSCL

ANC/CSDA

TRSDA

TRSCL

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