IRFR2607ZPBF datasheet(1/12 Pages) IRF

tên linh kiện	IRFR2607ZPBF

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12/21/04

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1

AUTOMOTIVE MOSFET

PD - 95953

HEXFET® Power MOSFET

VDSS = 75V

RDS(on) = 22mΩ

ID = 42A

Specifically designed for Automotive applications,

this HEXFET® Power MOSFET utilizes the latest

processing techniques to achieve extremely low on-

resistance per silicon area. Additional features of

this design are a 175°C junction operating tempera-

ture, fast switching speed and improved repetitive

avalanche rating . These features combine to make

this design an extremely efficient and reliable device

for use in Automotive applications and a wide variety

of other applications.

S

D

G

Description

l

Advanced Process Technology

l

Ultra Low On-Resistance

l

175°C Operating Temperature

l

Fast Switching

l

Repetitive Avalanche Allowed up to Tjmax

Features

D-Pak

IRFR2607Z

I-Pak

IRFU2607Z

IRFR2607ZPbF

IRFU2607ZPbF

Absolute Maximum Ratings

Parameter

Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)

ID @ TC = 100°C Continuous Drain Current, VGS @ 10V

A

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)

IDM

Pulsed Drain Current

PD @TC = 25°C Power Dissipation

W

Linear Derating Factor

W/°C

VGS

Gate-to-Source Voltage

V

EAS (Thermally limited) Single Pulse Avalanche Energyd

mJ

EAS (Tested )

Single Pulse Avalanche Energy Tested Value

h

IAR

Avalanche Current

Ã

A

EAR

Repetitive Avalanche Energy

g

mJ

TJ

Operating Junction and

TSTG

Storage Temperature Range

°C

Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

Thermal Resistance

Parameter

Typ.

Max.

Units

RθJC

Junction-to-Case

j

–––

1.38

RθJA

Junction-to-Ambient (PCB mount)

ij

–––

40

°C/W

RθJA

Junction-to-Ambient

j

–––

110

-55 to + 175

300 (1.6mm from case )

10 lbf

yin (1.1Nym)

110

0.72

± 20

Max.

45

32

180

42

96

See Fig.12a, 12b, 15, 16

l

Lead-Free

Số phần tương tự - IRFR2607ZPBF

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Kersemi Electronic Co.,...	IRFR2607ZPBF	4Mb / 11P	AUTOMOTIVE MOSFET
Kersemi Electronic Co.,...	IRFR2607ZPBF	4Mb / 11P	Advanced Process Technology
International Rectifier	IRFR2607ZPBF	342Kb / 11P	Advanced Process Technology
	IRFR2607ZPBF	342Kb / 11P	Advanced Process Technology
	IRFR2607ZPBF	342Kb / 11P	Advanced Process Technology

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