AP150N04D

40V N-Channel Enhancement Mode MOSFET

AP150N04D RVE1.0

臺灣永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=250uA

40

---

---

V

RDS(ON)

Static Drain-Source On-Resistance2

VGS=10V , ID=20A

---

2.0

2.3

RDS(ON)

Static Drain-Source On-Resistance2

VGS=4.5V , ID=20A

---

2.7

3.0

m

Ω

VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =250uA

1.2

1.6

2.2

V

IDSS

Drain-Source Leakage Current

VDS=32V , VGS=0V , TJ=25℃

---

---

1

uA

VDS=32V , VGS=0V , TJ=55℃

---

---

5

IGSS

Gate-Source Leakage Current

VGS=±20V , VDS=0V

---

---

±100

nA

gfs

Forward Transconductance

VDS=5V , ID=20A

---

53

---

S

Rg

Gate Resistance

VDS=0V , VGS=0V , f=1MHz

---

1.0

---

Ω

Qg

Total Gate Charge (4.5V)

VDS=15V , VGS=10V , ID=20A

---

45

---

nC

Qgs

Gate-Source Charge

---

12

---

Qgd

Gate-Drain Charge

---

18.5

---

Td(on)

Turn-On Delay Time

VDD=15V , VGS=10V ,

RG=3.3

,

ID=20A

---

18.5

---

ns

Tr

Rise Time

---

9

---

Td(off)

Turn-Off Delay Time

---

58.5

---

Tf

Fall Time

---

32

---

Ciss

Input Capacitance

VDS=20V , VGS=0V , f=1MHz

---

3972

---

pF

Coss

Output Capacitance

---

1119

---

Crss

Reverse Transfer Capacitance

---

82

---

IS

Continuous Source Current1,6

VG=VD=0V , Force Current

---

---

100

A

VSD

Diode Forward Voltage2

VGS=0V , IS=1A , TJ=25℃

---

---

1.2

V

Note :

1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.5mH,IAS=40A

4.The power dissipation is limited by 150℃ junction temperature

5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.