AP150N04D datasheet(1/7 Pages) APME

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AP150N04D

40V N-Channel Enhancement Mode MOSFET

AP150N04D RVE1.0

臺灣永源微電子科技有限公司

Description

The AP150N04D uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a

Battery protection or in other Switching application.

General Features

VDS = 40V

ID =150 A

RDS(ON) < 2.3m

Ω @ VGS=10V

Application

Battery protection

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP150N04D

AP150N04D XXX YYYY

2500

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

40

V

VGS

Gate-Source Voltage

±20

V

ID@TC=25

℃

Continuous Drain Current, VGS @ 10V1,6

150

A

ID@TC=100

℃

Continuous Drain Current, VGS @ 10V1,6

90

A

IDM

Pulsed Drain Current2

450

A

EAS

Single Pulse Avalanche Energy3

400

mJ

IAS

Avalanche Current

40

A

PD@TC=25

℃

Total Power Dissipation4

125

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-Ambient 1

50

℃/W

RθJC

Thermal Resistance Junction-Case1

1

℃/W

TO-252-3L

Số phần tương tự - AP150N04D

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
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