AP4P20DIY

-200V P-Channel Enhancement Mode MOSFET

AP4P20D/Y REV1.0

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VDS

Drain-Source Breakdown Voltage

VGS=0V, ID=-250µA

- 200

-233

-

V

ΔVDS/TJ

VDS Temperature Coefficient

Reference to 25 °C, ID=-1 mA

-

- 0.22

-

V/°C

VGS(th)

Gate-Source Threshold Voltage

VDS=VGS, ID=-250µA

- 2.0

3.0

- 4.0

V

RDS(on)

Drain-Source On-State Resistance

VGS=-10 V ID=-2Ab

-

1.4

1.7

Ω

RDS(on)

Drain-Source On-State Resistance

VGS=-5.5V ID=-1Ab

-

1.8

2.5

Ω

IGSS

Gate-Source Leakage

VGS=±20V

-

-

± 100

nA

IDSS

Zero Gate Voltage Drain Current

VDS=-200V, VGS=0V

-

-

- 100

µA

VDS = - 160 V, VGS = 0 V, TJ = 125 °C

-

-

- 500

gfs

Forward Transconductance

VDS = - 50 V, ID = - 2.2 A

1.1

-

-

S

Ciss

Input Capacitance

VGS=0V,

VDS=-25 V, f=1.0MHz,

-

340

-

pF

Coss

Output Capacitance

-

110

-

Crss

Reverse Transfer Capacitance

-

33

-

Qg

Total Gate Charge

ID=-3.9A, VDS=-160V VGS=-10 V

-

-

20

nC

Qgs

Gate-Source Charge

-

-

3.3

Qgd

Gate-Drain Charge

-

-

11

td(on)

Turn-On Delay Time

VDD=-100V, ID=- 3.9A, RG=18Ω,

RD = 24 Ω

-

8.8

-

ns

tr

Rise Time

-

27

-

td(off)

Turn-Off Delay Time

-

7.3

-

tf

Fall Time

-

19

-

IS

Continuous Source-Drain Diode Current

VG=VD=0V , Force Current

-

-

-3.6

A

ISM

Pulsed Diode Forward Currenta

-

-

- 14

VSD

Body Diode Voltage

TJ=25°C, IS=-3.6A, VGS=0V

-

-

- 1.3

V

Note :

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width

≦ 300us , duty cycle ≦ 2%

3、The EAS data shows Max. rating . The test condition is TJ = 25°C, L=0.3mH, RG=25Ω, VDD=50V，VGS=10V

4、The ISD=40A,di/dt≤100A/us, VDD≤BVDS, Start TJ=25

℃

5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.