AP4P20D datasheet(1/8 Pages) APME

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AP4P20DIY

-200V P-Channel Enhancement Mode MOSFET

AP4P20D/Y REV1.0

永源微電子科技有限公司

Description

The AP4P20D/Y uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 10V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = -200V ID =-4.0A

RDS(ON) < 1.7Ω @ VGS=-10V (Type：1.4Ω)

Application

Lithium battery protection

Mobile phone fast charging

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP4P20D

TO-252-3L

AP4P20D XXX YYYY

2500

AP4P20Y

TO-251-3L

AP4P20Y XXX YYYY

4000

Absolute Maximum Ratings (TC=25

℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

- 200

V

VGS

Gate-Source Voltage

± 20

V

ID@TC=25

℃

Continuous Drain Current, -VGS @ -10V1

-4.0

A

ID@TC=100

℃

Continuous Drain Current, -VGS @ -10V1

- 2.3

A

IDM

Pulsed Drain Currenta

- 14

A

EAS

Single Pulse Avalanche Energyb

310

mJ

IAR

Repetitive Avalanche Currenta

- 3.6

A

EAR

Repetitive Avalanche Energya

4.2

mJ

PD

Maximum Power Dissipation TC = 25 °C

42

W

dV/dt

Peak Diode Recovery dV/dtc

- 5.0

V/ns

TJ, Tstg

Operating Junction and Storage Temperature Range

- 55 to + 150

°C

RthJA

Maximum Junction-to-Ambient

62.5

°C/W

RthJC

Maximum Junction-to-Case (Drain)

3.0

°C/W

Số phần tương tự - AP4P20D

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Mô tả tương tự - AP4P20D

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Số phần tương tự - AP4P20D

Mô tả tương tự - AP4P20D

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