M25P10-AVMB3TSLASHY datasheet(40/51 Pages) NUMONYX

40 / 51 page

DC and AC parameters

M25P10-A

40/51

Table 18.

AC characteristics (25 MHz operation, device grade 6 or 3)

Test conditions specified in Table 10 and Table 12

Symbol

Alt.

Parameter

Min

Typ

Max

Unit

Clock frequency for the following

instructions: FAST_READ, PP, SE, BE, DP,

RES, WREN, WRDI, RDSR, WRSR

D.C.

MHz

Clock frequency for READ instructions

D.C.

MHz

tCH

(1)

tCH + tCL must be greater than or equal to 1/ fC.

tCLH

Clock High time

tCL

(1)

tCLL

Clock Low time

tCLCH

(2)

Value guaranteed by characterization, not 100% tested in production.

Clock Rise time(3) (peak to peak)

Expressed as a slew-rate.

0.1

V/ns

tCHCL

(2)

Clock Fall time(3) (peak to peak)

0.1

V/ns

tSLCH

tCSS

S Active Setup time (relative to C)

tCHSL

S Not Active Hold time (relative to C)

tDVCH

tDSU

Data In Setup time

tCHDX

tDH

Data In Hold time

tCHSH

S Active Hold time (relative to C)

tSHCH

S Not Active Setup time (relative to C)

tSHSL

tCSH

S Deselect time

100

tSHQZ

(2)

tDIS

Output Disable time

tCLQV

Clock Low to Output Valid

tCLQX

tHO

Output Hold time

tHLCH

HOLD Setup time (relative to C)

tCHHH

HOLD Hold time (relative to C)

tHHCH

HOLD Setup time (relative to C)

tCHHL

HOLD Hold time (relative to C)

tHHQX

(2)

tLZ

HOLD to Output Low-Z

tHLQZ

(2)

tHZ

HOLD to Output High-Z

tWHSL

(4)

Only applicable as a constraint for a WRSR instruction when SRWD is set to ‘1’.

Write Protect Setup time

tSHWL

(4)

Write Protect Hold time

100

tDP

(2)

S High to Deep Power-down mode

µs

tRES1

(2)

S High to Standby mode without Read

Electronic Signature

3 or 30(5)

It is 30 µs in devices produced with the ‘X’ and ‘Y’ process technology (grade 3 devices are only produced

using the ‘X’ process technology). Details of how to find the process letter on the device marking are given

in the application note AN1995.

µs

tRES2

(2)

S High to Standby mode with Read

Electronic Signature

1.8 or 30(5)

µs

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