M28W640HCT datasheet(34/72 Pages) NUMONYX

34 / 72 page

DC and AC parameters

M28W640HCT, M28W640HCB

34/72

Table 15.

DC characteristics

Symbol

Parameter

Test condition

Min

Typ

Max

Unit

ILI

Input Leakage current

0 V

≤VIN ≤VDD

±1

µA

ILO

Output Leakage current

0 V ≤VOUT ≤VDD

±10

µA

IDD

Supply current (Read)

E =VSS, G =VIH,

f=5MHz

918

IDD1

Supply current (Standby or Automatic

Standby)

E =VDD ±0.2 V,

RP =VDD ±0.2 V

µA

IDD2

Supply current (Reset)

RP =VSS ±0.2 V

µA

IDD3

Supply current (Program)

Program in progress

VPP =12V±5%

510

Program in progress

VPP =VDD

IDD4

Supply current (Erase)

Erase in progress

VPP =12V±5%

Erase in progress

VPP =VDD

IDD5

Supply current (Program/Erase Suspend)

E =VDD ±0.2 V,

Erase suspended

µA

IPP

Program current (Read or Standby)

VPP >VDD

400

µA

IPP1

Program current (Read or Standby)

VPP ≤VDD

µA

IPP2

Program current (Reset)

RP =VSS ±0.2 V

µA

IPP3

Program current (Program)

Program in progress

VPP =12V±5%

110

Program in progress

VPP =VDD

µA

IPP4

Program Current (Erase)

Erase in progress

VPP = 12V ± 5%

310

Erase in progress

VPP = VDD

µA

VIL

Input Low voltage

–0.5

0.4

VIH

Input High voltage

VDD –0.4

VDD +0.4

VOL

Output Low voltage

IOL = 100 µA,

VDD = VDD min

0.1

VOH

Output High voltage

IOH = –100 µA,

VDD = VDD min

VDD –0.1

VPP1

Program voltage (program or erase

operations)

1.65

3.6

VPPH

Program voltage (program or erase

operations)

11.4

12.6

VPPLK

Program voltage (program and erase lock-

out)

VLKO

VDD supply voltage (Program and Erase

lock-out)

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