M25P10-AVMB3TPSLASHY datasheet(38/51 Pages) NUMONYX

38 / 51 page

DC and AC parameters

M25P10-A

38/51

Table 15.

DC characteristics (device grade 3)(1)

Only for products with process technology code X.

Symbol

Parameter

Test condition (in addition to

those in Table 10)

Min(2)

Preliminary data.

Max(2)

Unit

ILI

Input Leakage current

± 2

µA

ILO

Output Leakage current

± 2

µA

ICC1

Standby current

S = VCC, VIN = VSS or VCC

100

µA

ICC2

Deep Power-down current

S = VCC, VIN = VSS or VCC

µA

ICC3

Operating current (READ)

C = 0.1VCC / 0.9.VCC at 25 MHz,

Q = open

8mA

C = 0.1VCC / 0.9.VCC at 20 MHz,

Q = open

4mA

ICC4

Operating current (PP)

S = VCC

ICC5

Operating current (WRSR)

S = VCC

ICC6

Operating current (SE)

S = VCC

ICC7

Operating current (BE)

S = VCC

VIL

Input Low voltage

–0.5

0.3VCC

VIH

Input High voltage

0.7VCC

VCC+0.4

VOL

Output Low voltage

IOL = 1.6 mA

0.4

VOH

Output High voltage

IOH = –100 μAVCC–0.2

Table 16.

Instruction times (device grade 6)

Test conditions specified in Table 10 and Table 12

Symbol

Alt.

Parameter

Min

Typ

Max

Unit

Write Status Register cycle time

tPP

(1)

When using the Page Program (PP) instruction to program consecutive bytes, optimized timings are

obtained with one sequence including all the bytes versus several sequences of only a few bytes. (1

≤n ≤

256).

Page Program cycle time (256 bytes)

1.4

5ms

Page Program cycle time (n bytes)

0.4+

n*1/256(2)

tPP=2μs+8μs*[int(n-1)/2+1]+4μs*[int(n-1)/2]+2μs, in products with process technology code X and Y.

tSE

Sector Erase cycle time

0.65

tBE

Bulk Erase cycle time

1.7

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