XP3P020J

P-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ 100% UIS Test

BVDSS

-30V

▼ Simple Drive Requirement

RDS(ON)

20mΩ

▼ Fast Switching Characteristic

ID

-30A

▼ RoHS Compliant & Halogen-Free

Description

Absolute Maximum Ratings@Tj=25

oC(unless otherwise specified)

Symbol

Units

VDS

V

VGS

V

ID@TC=25℃

A

ID@TC=100℃

A

IDM

A

PD@TC=25℃

W

PD@TA=25℃

W

EAS

Single Pulse Avalanche Energy

3

mJ

TSTG

℃

TJ

℃

Symbol

Value

Units

Rthj-c

Maximum Thermal Resistance, Junction-case

5

℃/W

Rthj-a

110

℃/W

Parameter

Drain-Source Voltage

28.8

Drain Current, VGS @ 10V

Drain Current, VGS @ 10V

+20

-30

Total Power Dissipation

Total Power Dissipation

1.13

Halogen-Free Product

Rating

-30

-55 to 150

Maximum Thermal Resistance, Junction-ambient

Thermal Data

Parameter

Operating Junction Temperature Range

Gate-Source Voltage

202311201YAGEO

1

25

Pulsed Drain Current

1

-100

-18.5

-55 to 150

Storage Temperature Range

G

D

S

XP3P020

series

are

innovated

design

and

silicon

process

technology to achieve the lowest possible on-resistance and fast

switching performance. It provides the designer with an extreme

efficient device for use in a wide range of power applications.

The straight lead version TO-251 package is widely preferred for all

commercial-industrial through hole applications.

G

D S

TO-251(J)