TP65H480G4JSG Datasheet

R07DS1667EU0101 Rev.1.01

Nov 21, 2025

Page 4

2. Specifications

2.1

Absolute Maximum Ratings

(Tc = 25°C unless otherwise stated.)

Caution: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such

conditions can adversely impact product reliability and result in failures not covered by warranty.

Symbol

Parameter

Minimum

Maximum

Unit

VDSS

Drain to source voltage (TJ = -55°C to 150°C)

-

650

V

VDSS(TR) , non-repetitive

Transient drain to source voltage, non-repetitive [1]

-

800

VDSS(TR) , repetitive

Transient drain to source voltage, repetitive [2]

-

750

VGSS

Gate to source voltage

-20

+20

PD

Maximum power dissipation at TC = 25°C

-

25

W

ID

Continuous drain current at TC = 25°C

-

5

A

Continuous drain current at TC = 100°C

-

3.1

A

IDM

Pulsed drain current (pulse width: 10µs)

-

16

A

TJ

Junction operating temperature

-55

+150

°C

TS

Storage temperature

-55

+150

°C

TSOLD

Reflow soldering temperature [3]

-

260

°C

1.

In off-state, spike duration < 30µs, non-repetitive.

2.

Off-state, spike duration < 5µs.

3.

Reflow MSL3.

2.2

Thermal Specifications

Symbol

Condition

Typical Value

Unit

RΘJC

Junction-to-case

5

°C/W

RΘJA

Junction-to-ambient [1]

50

1.

Device on one layer epoxy PCB for source connection (vertical and without air stream cooling, with 6cm2 copper area and 70µm thickness).