S29GL01GS datasheet(1/118 Pages) INFINEON

tên linh kiện	S29GL01GS

Giải thích chi tiết về linh kiện	128 Mb/256 Mb/512 Mb/1 Gb GL-S MIRRORBIT™ Flash

PDF	118 Pages

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Datasheet

Please read the Important Notice and Warnings at the end of this document

001-98285 Rev. *T

www.infineon.com

page 1

2023-07-17

S29GL01GS, S29GL512S, S29GL256S, S29GL128S

128 Mb/256 Mb/512 Mb/1 Gb GL-S

MIRRORBIT™ Flash

Parallel, 3.0 V

General description

The S29GL01G/512/256/128S are MIRRORBIT™ Eclipse flash products fabricated on 65-nm process technology.

These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as

90 ns. They feature a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one

operation, resulting in faster effective programming time than standard programming algorithms. This makes

these devices ideal for today’s embedded applications that require higher density, better performance and lower

power consumption.

Distinctive characteristics

• CMOS 3.0 V core with versatile I/O

• 65 nm MIRRORBIT™ Eclipse technology

• Single supply (VCC) for read / program / erase (2.7 V to 3.6 V)

•Versatile I/O feature

- Wide I/O voltage range (VIO): 1.65 V to VCC

• ×16 data bus

• Asynchronous 32-byte page read

• 512-byte programming buffer

- Programming in page multiples, up to a maximum of 512 bytes

• Single word and multiple program on same word options

• Automatic error checking and correction (ECC) – internal hardware ECC with single bit error correction

• Sector erase

- Uniform 128-kbyte sectors

• Suspend and resume commands for program and erase operations

• Status register, data polling, and ready/busy pin methods to determine device status

• Advanced sector protection (ASP)

- Volatile and non-volatile protection methods for each sector

• Separate 1024-byte one time program (OTP) array with two lockable regions

• Common flash interface (CFI) parameter table

• Temperature range / grade

- Industrial (–40°C to +85°C)

- Industrial plus(–40°C to +105°C)

- Automotive, AEC-Q100 grade 3 (–40°C to +85°C)

- Automotive, AEC-Q100 grade 2 (–40°C to +105°C)

• 100,000 program / erase cycles

• 20 years data retention

Số phần tương tự - S29GL01GS

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
SPANSION	S29GL01GS	3Mb / 104P	GL-S MirrorBit짰 Eclipse??Flash Non-Volatile Memory Family
	S29GL01GS	3Mb / 104P	GL-S MirrorBit Eclipse Flash Non-Volatile Memory Family
	S29GL01GS	906Kb / 106P	GL-S MirrorBit짰 Eclipse??Flash Non-Volatile Memory Family
Cypress Semiconductor	S29GL01GS	1Mb / 108P	1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory
Infineon Technologies A...	S29GL01GS	1Mb / 122P	128 Mb/256 Mb/512 Mb/1 Gb GL-S MIRRORBIT™ flash Parallel, 3.0 V Rev. U 2024-06-25

More results

Mô tả tương tự - S29GL01GS

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Integrated Silicon Solu...	IS42S83200A	917Kb / 49P	256 Mb Synchronous DRAM
SPANSION	S29WS-P	1Mb / 89P	512/256/128 Mb (32/16/8 M x 16 bit) 1.8 V Burst Simultaneous Read/Write MirrorBit Flash Memory
California Eastern Labs	NX5312	285Kb / 7P	1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE
SPANSION	S29WS-P	3Mb / 94P	MirrorBit짰 Flash Family 512/256/128 Mb (32/16/8 M x 16 bit) 1.8 V Burst Simultaneous Read/Write MirrorBit Flash Memory
NEC	NX5322	94Kb / 7P	1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE
Hynix Semiconductor	H27U518S2CTR-BC	414Kb / 37P	512 Mb NAND Flash
California Eastern Labs	NX5322	190Kb / 7P	1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE
California Eastern Labs	NX5321	190Kb / 7P	1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, FTTH InGaAsP MQW-FP LASER DIODE
List of Unclassifed Man...	SLFLD25-128J	195Kb / 21P	128 MB to 8 GB 2.5-Inch IDE Flash Drives
Cypress Semiconductor	S79FL256S	2Mb / 111P	256 Mbit (32 MB)/512 Mbit (64 MB), 3 V, Dual-Quad SPI Flash

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