-VGS - Gate-to-Source Voltage (V)

0

1

2

3

4

5

6

0

5

10

15

20

25

30

D007

TC = 25°C, I D = -2 A

TC = 125°C, I D = -2 A

Qg - Gate Charge (nC)

0

2

4

6

8

10

12

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

D004

ID = -2 A

VDS = -4 V

G

S

S

S

S

S

D

D

D

Gate

Source

Drain

Product

Folder

Order

Now

Technical

Documents

Tools &

Software

Support &

Community

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCTION DATA.

CSD22206W

SLPS689 – MAY 2017

CSD22206W –8-V P-Channel NexFET™ Power MOSFET

1

1 Features

1

•

Ultra-Low Resistance

•

Small Footprint 1.5 mm × 1.5 mm

•

Lead Free

•

Gate ESD Protection

•

RoHS Compliant

•

Halogen Free

•

Gate-Source Voltage Clamp

2 Applications

•

Load Switch Applications

•

Battery Management

•

Battery Protection

3 Description

This –8-V, 4.7-mΩ, 1.5-mm × 1.5-mm device is

designed to deliver the lowest on resistance and gate

charge in the smallest outline possible with excellent

thermal characteristics in an ultra-low profile. Low on

resistance coupled with the small footprint and low

profile make the device ideal for battery operated

space constrained applications.

Top View and Circuit Configuration

Product Summary

TA = 25°C

TYPICAL VALUE

UNIT

VDS

Drain-to-Source Voltage

–8

V

Qg

Gate Charge Total (–4.5 V)

11.2

nC

Qgd

Gate Charge Gate-to-Drain

1.8

nC

RDS(on)

Drain-to-Source On Resistance

VGS = –2.5 V

6.8

m

Ω

VGS = –4.5 V

4.7

VGS(th)

Threshold Voltage

–0.7

V

Device Information

DEVICE

QTY

MEDIA

PACKAGE

SHIP

CSD22206W

3000

7-Inch Reel

1.50-mm × 1.50-mm

Wafer BGA

Package

Tape

and

Reel

CSD22206WT

250

Absolute Maximum Ratings

TA = 25°C

VALUE

UNIT

VDS

Drain-to-Source Voltage

–8

V

VGS

Gate-to-Source Voltage

–6

V

ID

Continuous Drain Current(1)

–5

A

Pulsed Drain Current(2)

–108

A

PD

Power Dissipation

1.7

W

TJ,

Tstg

Operating Junction,

Storage Temperature

–55 to 150

°C

(1) Device operating at a temperature of 105°C.

(2) Typ RθJA = 75°C/W ,mounted on FR4 material with maximum

Cu mounting area, pulse width

≤ 100 μs, duty cycle ≤ 1%.

RDS(on) vs VGS

Gate Charge