STTH16L06CTY datasheet(4/12 Pages) STMICROELECTRONICS

4 / 12 page

Characteristics

STTH16L06C-Y

4/12

DocID026936 Rev 3

1.1

Characteristics (curves)

Figure 1: Conduction losses versus average

forward current (per diode)

Figure 2: Forward voltage drop versus forward

current (per diode)

Figure 3: Relative variation of thermal impedance

junction to case versus pulse duration

(TO-220AB, D²PAK)

Figure 4: Peak reverse recovery current versus

dIF/dt (typical values, per diode)

Figure 5: Reverse recovery time versus dlF/dt

(typical values, per diode)

Figure 6: Reverse recovery charges versus dlF/dt

(typical values, per diode)

P(W)

δ =tp/T

= 0.05

δ = 1

(A)

F (AV)

δ = 0.1 δ = 0.2

δ = 0.5

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E -03

1.E -02

1.E -01

1.E +00

th (j-c)

th (j-c )

t (s )

S ingle puls e

1 00

15 0

2 00

2 50

3 0 0

3 5 0

4 0 0

4 5 0

5 00

dI /dt(A/µs)

I =2 x I

F(AV )

I =I

F(AV )

I =0 .5 x I

F(AV )

V =40 0V

T =1 25 °C

IRM(A)

100

150

200

250

300

350

400

10 0

150

200

25 0

300

350

4 00

450

500

t (ns)

r r

dI /dt(A/µs)

I =I

F(AV )

I =0.5 x I

F(AV )

V =40 0V

T =125 °C

I =2 x I

F(AV )

5 0

10 0

15 0

20 0

25 0

30 0

35 0

40 0

45 0

50 0

55 0

60 0

65 0

70 0

75 0

80 0

1 0 0

2 0 0

3 00

4 00

5 00

Q (nC)

r r

I =2 x I

F(AV )

I =I

F(AV )

I =0.5 x I

F(AV )

V =40 0V

T =1 25 °C

dI /dt(A/µs)

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