Characteristics

STTH16L06C-Y

2/12

DocID026936 Rev 3

1

Characteristics

Table 2: Absolute ratings (limiting values, per diode, at 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

Tj = -40 °C to +175 °C

600

V

IF(RMS)

Forward rms current

30

A

IF(AV)

Average forward current δ = 0.5,

square wave

TC = 140 °C

Per diode

8

A

TC = 135 °C

Per device

16

TC = 130 °C

Per diode

10

TC = 120 °C

Per device

20

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

120

A

Tstg

Storage temperature range

-65 to +175

°C

Tj

Operating junction temperature range

-40 to +175

°C

Table 3: Thermal parameters

Symbol

Parameter

Max. value

Unit

Rth(j-c)

Junction to case

TO-220AB, D²PAK

Per diode

2.5

°C/W

Total

1.6

Rth(c)

Coupling

0.7

°C/W

When the diodes 1 and 2 are used simultaneously:

ΔTj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c)

Table 4: Static electrical characteristics (per diode)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

-

8

µA

Tj = 150 °C

-

25

240

VF(2)

Forward voltage drop

Tj = 25 °C

IF = 8 A

-

1.80

V

Tj = 150 °C

-

1.05

1.35

Tj = 25 °C

IF = 16 A

-

2.08

Tj = 150 °C

-

1.28

1.64

Notes:

(1)Pulse test: tp = 5 ms, δ < 2%

(2)Pulse test: tp = 380 µs, δ < 2%

To evaluate the conduction losses, use the following equation:

P = 1.06 x IF(AV) + 0.036 x IF2(RMS)