Description

The SXESDHC2FD2VB protects sensitive semiconductor components

from damage or upset due to electrostatic discharge (ESD) and other

voltage induced transient events. They feature large cross-sectional area

junctions for conducting high transient currents, offer desirable electrical

characteristics for board level protection, such as fast response time, low

operating voltage.

Feature

300W peak pulse power per line (tP = 8/20μs)

DFN1006-2L package

Replacement for MLV (0402)

Bidirectional configurations

Response time is typically < 1ns

Low clamping voltage

Transient protection for data lines to

IEC61000-4-2(ESD) ±30kV(air), ±30kV(contact);

IEC61000-4-4 (EFT) 40A (5/50ns)

Applications

Cellular phones

Portable devices

Digital cameras

Power supplies

DFN1006-2L

Mechanical Characteristics

Qualified max reflow temperature:260℃

Device meets MSL 1 requirements

RoHS compliant

Pin 2

Pin 1

Transient Voltage Suppressors for ESD Protection

SXESDHC2FD2VB

1

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