1

Characteristics

Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage (Tj = -40 °C to +175 °C)

1200

V

IF(RMS)

Forward rms current

38

A

IF(AV)

Average forward current

Tc = 155 °C, DC current

20

A

IFRM

Repetitive peak forward current

Tc =155 °C, Tj = 175 °C, δ = 0.1

78

A

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal, Tc = 25 °C

140

A

tp = 10 ms sinusoidal, Tc = 150 °C

120

tp = 10 µs square, Tc = 25 °C

700

Tstg

Storage temperature range

-55 to +175

°C

Tj

Operating junction temperature(1)

-40 to +175

°C

1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.

Table 2. Thermal resistance parameters

Symbol

Parameter

Value

Unit

Typ.

Max.

Rth(j-c)

Junction to case

0.30

0.45

°C/W

Table 3. Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR (1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

-

10

120

µA

Tj = 150 °C

-

60

800

VF (2)

Forward voltage drop

Tj = 25 °C

IF = 20 A

-

1.35

1.50

V

Tj = 150 °C

-

1.75

2.25

1. Pulse test: tp = 5 ms, δ < 2%

2. Pulse test: tp = 500 µs, δ < 2%

To evaluate the conduction losses, use the following equation: P = 1.07 x IF(AV) + 0.059 x IF 2(RMS)

Table 4. Dynamic electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

QCj (1)

Total capacitive charge

VR = 800 V

-

129

-

nC

Cj

Total capacitance

VR = 0 V, Tc = 25 °C, F = 1 MHz

-

1650

-

pF

VR = 800 V, Tc = 25 °C, F = 1 MHz

-

110

-

1.

Most accurate value for the capacitive charge:

QcjVR = ∫0VRCjVdV

STPSC20H12-Y

Characteristics

DS11830 - Rev 4

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