A

K

A

K

K

TO-220AC

K

NC

A

D²PAK

K

K

NC

A

D²PAK HV

A

Product label

Features

•

AEC-Q101 qualified

•

No or negligible reverse recovery

•

Switching behavior independent of temperature

•

Robust high voltage periphery

•

PPAP capable

•

Operating Tj from -40 °C to 175 °C

•

D²PAK HV creepage distance (anode to cathode) = 5.38 mm min.

•

ECOPACK compliant

Applications

•

On board charger

Description

The SiC diode is an ultra high performance power Schottky diode. It is manufactured

using a silicon carbide substrate. The wide band gap material allows the design of a

Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no

recovery is shown at turn-off and ringing patterns are negligible. The minimal

capacitive turn-off behavior is independent of temperature.

Especially suited for use in PFC applications, the STPSC20H12-Y will boost

performance in hard switching conditions. Its high forward surge capability ensures

good robustness during transient phases.

Product status link

STPSC20H12-Y

Product summary

IF(AV)

20 A

VRRM

1200 V

Tj (max.)

175 °C

VF (typ.)

1.35 V

Automotive 1200 V, 20 A, silicon carbide power Schottky diode

STPSC20H12-Y

Datasheet

DS11830 - Rev 4 - May 2019

For further information contact your local STMicroelectronics sales office.

www.st.com