PCM5121PW datasheet(7/121 Pages) TI2

7 / 121 page

PCM5121, PCM5122

www.ti.com

SLAS763C – AUGUST 2012 – REVISED OCTOBER 2018

Product Folder Links: PCM5121 PCM5122

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7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

MIN

MAX

UNIT

Supply voltage

AVDD, CPVDD, DVDD

–0.3

3.9

LDO with DVDD at 1.8 V

–0.3

2.25

Digital input voltage

DVDD at 1.8 V

–0.3

2.25

DVDD at 3.3 V

–0.3

3.9

Analog input voltage

–0.3

3.9

Operating junction temperature, TJ

–40

130

°C

Storage temperature, Tstg

–65

150

°C

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic

discharge

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±2000

Charged-device model (CDM), per JEDEC specification JESD22-C101(2)

±750

(1)

All grounds on board are tied together; they must not differ in voltage by more than 0.2-V maximum, for any combination of ground

signals.

7.3 Recommended Operating Conditions

MIN

NOM

MAX

UNIT

AVDD

Analog power supply voltage

Referenced to AGND(1)

VCOM mode

3.3

3.46

VREF mode

3.2

3.3

3.46

DVDD

Digital power supply voltage

Referenced to DGND(1)

1.8 V DVDD

1.65

1.8

1.95

3.3 V DVDD

3.1

3.3

3.46

CPVDD

Charge pump supply voltage

Referenced to CPGND(1)

3.1

3.3

3.46

MCLK

Master clock frequency

MHz

LOL, LOR

Stereo line output load resistance

Ω

CLOUT

Digital output load capacitance

Operating junction temperature

–40

130

°C

(1)

For more information about trdational and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report, SPRA953.

7.4 Thermal Information

THERMAL METRIC(1)

PCM512x

UNIT

RHB (TSSOP)

32 PINS

RθJA

Junction-to-ambient thermal resistance

72.2

°C/W

RθJC(top)

Junction-to-case(top) thermal resistance

17.5

°C/W

RθJB

Junction-to-board thermal resistance

35.0

°C/W

ψJT

Junction-to-top characterization parameter

0.4

°C/W

ψJB

Junction-to-board characterization parameter

34.5

°C/W

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