MB85RS128TY(AEC-Q100 Compliant)

DS501-00048-7v0-E

17



POWER ON/OFF SEQUENCE

If the device does not operate within the specified conditions of read cycle, write cycle or power on/off

sequence, memory data can not be guaranteed.



FeRAM CHARACTERISTICS

*1 : Total number of reading and writing defines the minimum value of endurance, as an FeRAM memory

operates with destructive readout mechanism.

*2: Minimum values define retention time of the first reading/writing data right after shipment, and these values

are calculated by qualification results.

*3: Under evaluation for more than 3.38 years(+125 C).

Parameter

Symbol

Value

Unit

Condition

VDD

Min

Max

CS level hold time at power OFF

tpd

400



ns

1.8V to 2.7V

0



2.7V to 3.6V

CS level hold time at power ON

tpu

250





s



Power supply rising time

tr

0.05



ms/V



Power supply falling time

tf

0.1



ms/V



Parameter

Value

Unit

Remarks

Min

Max

Read/Write Endurance*1

1013



Times/byte Total number of reading and writing.

Operation Ambient Temperature TA   125 C

Data Retention*2

3.38 or more*3 

Years

Operation Ambient Temperature TA   125 C

10.9



Operation Ambient Temperature TA   105 C

40.2



Operation Ambient Temperature TA   85 C

CS >VDD

× 0.8 ∗

tpd

tpu

tr

tf

VIL (Max)

1.0 V

VIH (Min)

VDD (Min)

VDD

CS : don't care

CS >VDD

× 0.8 ∗

CS

CS

VIL (Max)

1.0 V

VIH (Min)

VDD (Min)

VDD

VSS

VSS

* : CS (Max) < VDD  0.5 V