1

Characteristics

Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

100

V

IF(RMS)

Forward rms current

2

A

IF(AV)

Average forward current

Tc = 160 °C, δ = 0.5

1

A

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

50

A

PARM

Repetitive peak avalanche power

tp = 10 µs, Tj = 125 °C

108

W

Tstg

Storage temperature range

-65 to +175

°C

Tj

Operating junction temperature range(1)

175

°C

1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.

Table 2. Thermal parameters

Symbol

Parameter

Max. value

Unit

Rth(j-c)

Junction to case

20

°C/W

Table 3. Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

-

4

µA

Tj = 125 °C

-

0.2

0.5

mA

VF(2)

Forward voltage drop

Tj = 25 °C

IF = 1 A

-

0.77

V

Tj = 125 °C

-

0.58

0.62

Tj = 25 °C

IF = 2 A

-

0.86

Tj = 125 °C

-

0.65

0.7

1. Pulse test: tp = 5 ms, δ < 2%

2. Pulse test: tp = 380 µs, δ < 2%

To evaluate the conduction losses, use the following equation:

P = 0.54 x IF(AV) + 0.08 x IF2(RMS)

STPS1H100MF

Characteristics

DS5836 - Rev 2

page 2/9