VNH5050ATR-E datasheet(12/33 Pages) STMICROELECTRONICS

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Electrical specifications

VNH5050A-E

12/33

Doc ID 16009 Rev 11

ISD_LS

Shutdown LS current

VCLP

Total clamp voltage

(VCC to GND)

IOUT =8.5 A

VCLPH

High-side clamp voltage

(VCC to OUTA =0 or

OUTB =0)

IOUT =8.5 A

TSD_LS

Time to shutdown for the

low-side

µs

VCLPLS

Low-side clamp voltage

(OUTA =VCC or

OUTB =VCC to GND)

IOUT =8.5 A

TTSD

(1)

Thermal shutdown

temperature

VIN = 2.1 V

150

175

200

°C

TTR

(2)

Thermal reset temperature

135

°C

THYST

(2)

Thermal hysteresis

(TSD-TR)

°C

TTSD_LS

Low-side thermal

shutdown temperature

VIN = 0 V

150

175

200

°C

TTSD is the minimum threshold temperature between HS and LS

Valid for both HSD and LSD.

Table 12.

Current sense (9 V < VCC <18 V)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IOUT/ISENSE

IOUT = 5 A; VSENSE =0.8 V;

VCSD =0 V;

Tj =- 40 °C to 150 °C

4350

5100

6270

IOUT/ISENSE

IOUT =10A;

VSENSE =1.6 V; VCSD =0 V;

Tj =- 40 °C to 150 °C

4350

5030

5870

IOUT/ISENSE

IOUT =25A; VSENSE =4 V;

VCSD =0 V;

Tj =- 40 °C to 150 °C

4100

4930

5490

dK1/K1

(1)

Analog sense current

drift

IOUT = 5 A; VSENSE =0.8 V;

VCSD =0 V;

Tj =- 40 °C to 150°C

-14

dK2/K2

(1)

Analog sense current

drift

IOUT = 10 A; VSENSE =1.6 V;

VCSD =0 V;

Tj =- 40 °C to 150°C

-13

dK3/K3

(1)

Analog sense current

drift

IOUT = 25 A; VSENSE =4 V;

VCSD =0 V;

Tj =- 40 °C to 150 °C

-13

Table 11.

Protections and diagnostics (continued)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

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