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L9679P bảng dữ liệu(PDF) 223 Page - STMicroelectronics |
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L9679P bảng dữ liệu(HTML) 223 Page - STMicroelectronics |
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223 / 279 page ![]() DS11627 Rev 7 223/279 L9679P Electrical characteristics 278 18 Electrical characteristics Every parameter in this chapter is fulfilled down to VINGOOD(max). No device damage is granted to occur down to VINBAD(min). GNDA pin is used as ground reference for the voltage measurements performed within the device, unless otherwise stated. All tables or parameters declared ‘Design Info’ are not tested during production testing 18.1 Configuration and control All electrical characteristics are valid for the following conditions unless otherwise noted. -40 °C Ta +95 °C. Table 21. Configuration and control DC specifications No Symbol Parameter Conditions Min Typ Max Unit 1 VNOV Normal Operating Voltage Design Info Depending on power supply configuration 6 13 18 V 2 VJSV Jump Start Voltage Design Info 40°C ≤ Ta ≤ 50°C 18 - 26 V 3 VLDV Load Dump Voltage Transient Design Info 26.5 - 40 V 4 WU_mon WAKEUP Monitor threshold GNDSUBx as ground reference Vin =5.5 V and 35 V - - 1.5 V 5 WU_off WAKEUP Off threshold GNDSUBx as ground reference Vin =5.5 V and 35 V 2 2.5 3 V 6 WU_on WAKEUP On threshold GNDSUBx as ground reference 4 4.5 5 V 7 WURPD WAKEUP Pull-down Resistor GNDSUBx as ground reference 120 300 480 kΩ 8 VBGOOD0 VBATMON Thresholds SYS_CTL(VBATMON_TH_SEL)=00 or 11 5.5 5.75 6 V 9 VBBAD0 SYS_CTL(VBATMON_TH_SEL)=00 or 11 5 5.25 5.5 V 10 VBGOOD1 SYS_CTL(VBATMON_TH_SEL)=01 6.45 6.7 6.95 V 11 VBBAD1 SYS_CTL(VBATMON_TH_SEL)=01 5.95 6.2 6.45 V 12 VBGOOD2 SYS_CTL(VBATMON_TH_SEL)=10 7.5 7.75 8 V 13 VBBAD2 SYS_CTL(VBATMON_TH_SEL)=10 7 7.25 7.6 V |
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