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L9679ETR bảng dữ liệu(PDF) 107 Page - STMicroelectronics |
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L9679ETR bảng dữ liệu(HTML) 107 Page - STMicroelectronics |
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107 / 127 page ![]() Symbol Parameter Comments / Conditions Min Typ Max Unit IRSQ_LOW_TH Detection threshold for “resistance too low” Equivalent to resistance range -25 °C ≤ Tj ≤ +150 °C guaranteed by design/characterization -12% 6 +17% mA -40 °C ≤ Tj ≤ +150 °C -12% 6 +22% mA TFLT_RLOW “Resistance too low” deglitch filter time - 12 15 18 µs RSQ_HIGH Detection threshold for “resistance too high” Design info 2 - 5 kΩ IRSQ_HIGH Detection threshold for “resistance too high” Equivalent to resistance range -25 °C ≤ Tj ≤ +150 °C guaranteed by design/characterization -17% 700 +20% µA -40 °C ≤ Tj ≤ +150 °C -17% 700 +22% µA TFLT_RHIGH “Resistance too high” deglitch filter time - 12 15 18 µs Tdelay_STG_selection Time needed to change the VRCM STG thresholds (450 µA-to-2 mA or 2 mA-to-450 µA) guaranteed by design - - 2 µs 13.8.3 High/low-side FET test All electrical characteristics are valid for the following conditions unless otherwise noted: -40 °C ≤ Tamb ≤ +105 °C VSAT_ON(max) ≤ VSAT ≤ VSAT(max) 6 V ≤ SSxy ≤ 35 V 7 V ≤ VSYNC ≤ 35 V Table 31. High/low-side FET test Symbol Parameter Comments / Conditions Min Typ Max Unit IHS_FET_TH Detection threshold high side FET test -12% 1.8 +12% mA ILS_FET_TH Detection threshold low side FET test SYS_CTL(PD&VRCM_SEL) = 0 -15.5% 450 +15.5% µA ILS_FET_TH_HIGH SYS_CTL(PD&VRCM_SEL) = 1 -15% 2 15% EFET_TEST Energy transferred to squib/pyroswitch during HS/LS FET tests Design info - - 170 µJ TDRIVER_DIS Driver disable time Guaranteed by design - - 1.5 µs TTOT_FETTEST_ACTIVE Total FET test activation time in case of no fault condition Guaranteed by design - - 4 µs TFETTIMEOUT HS/LS FET test timeout - 190 200 210 µs TFLT_LKGB_FT Deglitch filter time during FET test on IHS_FET_TH / ILS_FET_TH current thresholds - 0.8 1 1.2 µs SGxy_OPEN Squib/Pyroswitch open ground detection GNDD as ground reference 300 450 600 mV TFLT_SGOPEN Squib/Pyroswitch open ground detection filter time - 46 50 54 µs L9679E Electrical characteristics DS12485 - Rev 8 page 107/127 |
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