MB85RS4MT

DS501-00053-3v1-E

17



POWER ON/OFF SEQUENCE

If the device does not operate within the specified conditions of read cycle, write cycle or power on/off

sequence, memory data can not be guaranteed.



FeRAM CHARACTERISTICS

*1 : For details on the Read/Write endurance value, please refer to “■Read/Write endurance about FeRAM”.

*2 : Minimum values define retention time of the first reading/writing data after shipment, and these values are

calculated by qualification results.

Parameter

Symbol

Value

Unit

condition

Min

Max

CS level hold time at power OFF

tpd

0



ns

VDD=2.7 to 3.6V

400



VDD=1.8 to 2.7V

CS level hold time at power ON

tpu

250





s

Power supply rising time

tr

0.05



ms/V

Power supply falling time

tf

0.1

ms/V

Parameter

Value

Unit

Remarks

Min

Max

Read/Write Endurance*1

1014



Times

Operation Ambient Temperature TA   85 C

Total number of reading and writing.

Data Retention*2

10



Years

Operation Ambient Temperature TA   85 C

95



Operation Ambient Temperature TA   55 C



200



Operation Ambient Temperature TA   35 C

VSS

CS >VDD

× 0.7 ∗

tpd

tpu

tr

tf

VIL (Max)

1.0 V

VIH (Min)

VDD (Min)

VDD

CS : don't care

CS >VDD

× 0.7 ∗

CS

CS

VSS

VIL (Max)

1.0 V

VIH (Min)

VDD (Min)

VDD

* : CS (Max) < VDD  0.5 V