MB85RS2MTY(AEC-Q100 Compliant)

22

DS501-00061-3v1-E



FeRAM CHARACTERISTICS

*1 : Total number of reading and writing defines the minimum value of endurance, as an FeRAM memory

operates with destructive readout mechanism.

*2: Minimum values define retention time of the first reading/writing data right after shipment, and these values

are calculated by qualification results.

*3: Under evaluation for more than 4.2years(+125 C).



NOTE ON USE

We recommend programming of the device after reflow except for special sector region and serial number

region. Data written before reflow cannot be guaranteed.



ESD AND LATCH-UP

(8-pin plastic SOP 150mil)

Parameter

Value

Unit

Remarks

Min

Max

Read/Write Endurance*1

1013



Times/byte Operation Ambient Temperature TA   125 C

Data Retention*2

4.2 or more*3



Years

Operation Ambient Temperature TA   125 C

13.7



Operation Ambient Temperature TA   105 C

50.4



Operation Ambient Temperature TA   85 C

Test

DUT

Value

ESD HBM (Human Body Model)

JESD22-A114 compliant

MB85RS2MTYPNF-GS-AWE2

MB85RS2MTYPNF-GS-AWERE2



|2000 V|

ESD CDM (Charged Device Model)

AEC-Q100-011(FI-CDM) compliant



|1000 V|

Latch-Up (I-test)

JESD78 compliant



|125mA|

Latch-Up (Vsupply overvoltage test)

JESD78 compliant



5.4V