REF2925 datasheet(7/62 Pages) TI2

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ADS8881

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SBAS547D – MAY 2013 – REVISED AUGUST 2015

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(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

8 Specifications

8.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

AINP to GND or AINN to GND

–0.3

REF + 0.3

AVDD to GND or DVDD to GND

–0.3

REF to GND

–0.3

5.7

Digital input voltage to GND

–0.3

DVDD + 0.3

Digital output to GND

–0.3

DVDD + 0.3

Operating temperature, TA

ADS8881C

°C

ADS8881I

–40

Storage temperature, Tstg

–65

150

°C

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

8.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±2000

Charged-device model (CDM), per JEDEC specification JESD22-

C101(2)

±500

8.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

AVDD

Analog power supply

DVDD

Digital power supply

VREF

Reference voltage

8.4 Thermal Information

THERMAL METRIC

ADS8881

UNIT

DGS (VSSOP)

DRC (VSON)

10 PINS

RθJA

Junction-to-ambient thermal resistance

151.9

111.1

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

45.4

46.4

°C/W

RθJB

Junction-to-board thermal resistance

72.2

45.9

°C/W

ψJT

Junction-to-top characterization parameter

3.3

3.5

°C/W

ψJB

Junction-to-board characterization parameter

70.9

45.5

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

N/A

°C/W

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