MB85R1002A

6

DS501-00004-6v1E



ELECTRICAL CHARACTERISTICS

1. DC Characteristics

(within recommended operating conditions)

*1 : During the measurement of IDD, the Address, Data In were taken to only change once per active cycle.

Iout : output current

*2 : All pins other than setting pins should be input at the CMOS level voltages such as H  VDD  0.2 V, L  0.2 V.

Parameter

Symbol

Condition

Value

Unit

Min

Typ

Max

Input Leakage Current

|ILI|

VIN = 0 V to VDD





10



A

Output Leakage Current

|ILO|

VOUT = 0 V to VDD,

CE1 = VIH or OE = VIH





10



A

Operating Power Supply

Current*1

IDD

CE1 = 0.2 V, CE2 = VDD  0.2 V,

Iout = 0 mA



10

15

mA

Standby Current*2

ISB

CE1  VDD  0.2 V



10

50



A

CE2  0.2 V

OE  VDD  0.2 V, WE  VDD  0.2 V

LB  VDD  0.2 V, UB  VDD  0.2 V

High Level Input Voltage

VIH

VDD = 3.0 V to 3.6 V

VDD  0.8



VDD  0.5

(  4.0)

V

Low Level Input Voltage

VIL

VDD = 3.0 V to 3.6 V



0.5





0.6

V

High Level Output Voltage

VOH

IOH =  1.0 mA

VDD  0.8





V

Low Level Output Voltage

VOL

IOL = 2.0 mA





0.4

V