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AP22950 bảng dữ liệu(PDF) 3 Page - Diodes Incorporated

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Giải thích chi tiết về linh kiện  HIGH-VOLTAGE USB PD VBUS SINK PATH POWER SWITCH
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AP22950 bảng dữ liệu(HTML) 3 Page - Diodes Incorporated

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AP22950
Document number: DS47157 Rev. 2 - 2
3 of 15
www.diodes.com
May 2025
© 2025 Copyright Diodes Incorporated. All Rights Reserved.
AP22950
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) (Note 4)
Symbol
Parameter
Ratings
Unit
ESD HBM
Human Body ESD Protection
4
kV
ESD CDM
Charged Device Model ESD Protection
1
kV
VBUS
Input Voltage at VBUS
-0.5 to 29
V
VINT
Input Voltage at VINT
-0.5 to 29
V
ENb
Enable Control Input (Active Low)
-0.5 to 29
V
ACKb
Power-Good Acknowledge (Active Low)
-0.5 to 6
V
OVLO
OVLO Threshold Adjustment
-0.5 to VBUS
V
ISW
Maximum Continuous Switch Current
TA = +85°C
5.0
A
TA = +105°C
3.5
A
TJ(max)
Maximum Junction Temperature
-40 to +150
°C
TSTG
Storage Temperature
-65 to +150
°C
Note:
4. Stresses greater than Absolute Maximum Ratings specified above can cause permanent damage to the device. These are stress ratings only;
functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability can be
affected by exposure to absolute maximum rating conditions for extended periods of time.
Package Thermal Information (Note 5)
Symbol
Parameter
Value
Unit
RθJA
Junction-to-Ambient Thermal Resistance
60.3
°C/W
RθJC(top)
Junction-to-Case (Top) Thermal Resistance
12.2
°C/W
RθJB
Junction-to-Board Thermal Resistance
6.2
°C/W
ψJT
Junction-to-Top Characterization Parameter
0.26
°C/W
ψJB
Junction-to-Board Characterization Parameter
5.81
°C/W
RθJC(bot)
Junction-to-Case (Bottom) Thermal Resistance
6.67
°C/W
Note:
5. RJA and RJC are measured at TA = +25°C on a highly effective thermal conductivity four-layer test board per JEDEC 51-7.
Recommended Operating Conditions (@TA = +25°C, unless otherwise specified.)
Symbol
Parameter
Min
Max
Unit
VBUS
Input Voltage at VBUS
2.5
22.5
V
VINT
Input Voltage at VINT
0
22.5
V
ACKb
Power-Good Acknowledge Pullup Voltage
0
5.5
V
ENb
Enable Control
0
20
V
CIN
Input Capacitance on VBUS
(Note 6)
For IEC61000-4-5, 110V
22
—
µF
For IEC61000-4-5, 100V
1
—
µF
COUT
Output Capacitance on VINT (Note 6)
10
1000
µF
TJ
Operating Junction Temperature
-40
+125
°C
TA
Operating Ambient Temperature
-40
+85
°C
Note:
6. Refer to the typical application circuit.



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