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AP22950 bảng dữ liệu(PDF) 3 Page - Diodes Incorporated |
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AP22950 bảng dữ liệu(HTML) 3 Page - Diodes Incorporated |
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3 / 15 page ![]() AP22950 Document number: DS47157 Rev. 2 - 2 3 of 15 www.diodes.com May 2025 © 2025 Copyright Diodes Incorporated. All Rights Reserved. AP22950 Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) (Note 4) Symbol Parameter Ratings Unit ESD HBM Human Body ESD Protection 4 kV ESD CDM Charged Device Model ESD Protection 1 kV VBUS Input Voltage at VBUS -0.5 to 29 V VINT Input Voltage at VINT -0.5 to 29 V ENb Enable Control Input (Active Low) -0.5 to 29 V ACKb Power-Good Acknowledge (Active Low) -0.5 to 6 V OVLO OVLO Threshold Adjustment -0.5 to VBUS V ISW Maximum Continuous Switch Current TA = +85°C 5.0 A TA = +105°C 3.5 A TJ(max) Maximum Junction Temperature -40 to +150 °C TSTG Storage Temperature -65 to +150 °C Note: 4. Stresses greater than Absolute Maximum Ratings specified above can cause permanent damage to the device. These are stress ratings only; functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability can be affected by exposure to absolute maximum rating conditions for extended periods of time. Package Thermal Information (Note 5) Symbol Parameter Value Unit RθJA Junction-to-Ambient Thermal Resistance 60.3 °C/W RθJC(top) Junction-to-Case (Top) Thermal Resistance 12.2 °C/W RθJB Junction-to-Board Thermal Resistance 6.2 °C/W ψJT Junction-to-Top Characterization Parameter 0.26 °C/W ψJB Junction-to-Board Characterization Parameter 5.81 °C/W RθJC(bot) Junction-to-Case (Bottom) Thermal Resistance 6.67 °C/W Note: 5. RJA and RJC are measured at TA = +25°C on a highly effective thermal conductivity four-layer test board per JEDEC 51-7. Recommended Operating Conditions (@TA = +25°C, unless otherwise specified.) Symbol Parameter Min Max Unit VBUS Input Voltage at VBUS 2.5 22.5 V VINT Input Voltage at VINT 0 22.5 V ACKb Power-Good Acknowledge Pullup Voltage 0 5.5 V ENb Enable Control 0 20 V CIN Input Capacitance on VBUS (Note 6) For IEC61000-4-5, 110V 22 — µF For IEC61000-4-5, 100V 1 — µF COUT Output Capacitance on VINT (Note 6) 10 1000 µF TJ Operating Junction Temperature -40 +125 °C TA Operating Ambient Temperature -40 +85 °C Note: 6. Refer to the typical application circuit. |
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