BULD118 datasheet(1/7 Pages) STMICROELECTRONICS

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BULD118D-1

HIGH VOLTAGE FAST-SWITCHING

NPN POWER TRANSISTOR

s

INTEGRATED ANTIPARALLEL

COLLECTOR- EMITTER DIODE

s

HIGH VOLTAGE CAPABILITY

s

LOW SPREAD OF DYNAMIC PARAMETERS

s

MINIMUM LOT-TO-LOT SPREAD FOR

RELIABLE OPERATION

s

VERY HIGH SWITCHING SPEED

APPLICATIONS:

s

ELECTRONIC BALLASTS FOR

FLUORESCENT LIGHTING

s

FLYBACK AND FORWARD SINGLE

TRANSISTOR LOW POWER CONVERTERS

DESCRIPTION

The device is manufactured using high voltage

Multi

Epitaxial

Planar

technology

for

high

switching speeds and medium voltage capability.

It uses a Cellular Emitter structure with planar

edge termination to enhance switching speeds

while maintaining the wide RBSOA.

The device is designed for use in lighting

applications and low cost switch-mode power

supplies.

INTERNAL SCHEMATIC DIAGRAM

June 1998

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Val ue

Uni t

VCES

Collect or-Emitt er Voltage (VBE = 0)

700

V

VCEO

Collect or-Emitt er Voltage (IB = 0)

400

V

VEBO

Emitt er-Base Voltage (IC =0)

9

V

IC

Collect or Current

2

A

ICM

Collect or Peak Current (tp <5 ms)

4

A

IB

Base Current

1

A

IBM

Base Peak Current (tp <5 ms)

2

A

Ptot

Total Dissipation at Tc =25

oC20

W

Tstg

St orage Temperature

-65 to 150

oC

Tj

Max. Operating Junction Temperature

150

oC

3

2

1

IPAK

(TO-251)

®

1/7

Số phần tương tự - BULD118

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
STMicroelectronics	BULD118D-1	261Kb / 7P	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Jun-2001
STMicroelectronics	BULD118D-1	261Kb / 7P	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Jun-2001

More results

Mô tả tương tự - BULD118

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