DESCRIPTION
The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability.
It uses a Cellular Emitter structure to enhance switching speeds.

■ IMPROVED SPECIFICATION:
   - LOWER LEAKAGE CURRENT
   - TIGHTER GAIN RANGE
   - DC CURRENT GAIN PRESELECTION
   - TIGHTER STORAGE TIME RANGE
■ HIGH VOLTAGE CAPABILITY
■ INTEGRATED FREE-WHEELING DIODE
■ LOW SPREAD OF DYNAMIC PARAMETERS
■ MINIMUM LOT-TO-LOT SPREAD FOR
   RELIABLE OPERATION
■ VERY HIGH SWITCHING SPEED
■ FULLY CHARACTERIZED AT 125 oC
■ LARGE RBSOA

APPLICATIONS
■ UP TO 120W ELECTRONIC
   TRANSFORMERS FOR HALOGEN LAMPS
■ SWITCH MODE POWER SUPPLIES