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LF353M/NOPB bảng dữ liệu(PDF) 1 Page - Texas Instruments

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LF353-N
www.ti.com
SNOSBH3F – APRIL 1998 – REVISED MARCH 2013
LF353-N Wide Bandwidth Dual JFET Input Operational Amplifier
Check for Samples: LF353-N
1
FEATURES
DESCRIPTION
These devices are low cost, high speed, dual JFET
2
•
Internally Trimmed Offset Voltage: 10 mV
input operational amplifiers with an internally trimmed
•
Low Input Bias Current: 50pA
input offset voltage (BI-FET II technology). They
•
Low Input Noise Voltage: 25 nV/
√Hz
require low supply current yet maintain a large gain
bandwidth product and fast slew rate. In addition, well
•
Low Input Noise Current: 0.01 pA/
√Hz
matched high voltage JFET input devices provide
•
Wide Gain Bandwidth: 4 MHz
very low input bias and offset currents. The LF353-N
•
High Slew Rate: 13 V/
μs
is pin compatible with the standard LM1558 allowing
designers
to
immediately
upgrade
the
overall
•
Low Supply Current: 3.6 mA
performance of existing LM1558 and LM358 designs.
•
High Input Impedance: 1012
Ω
These amplifiers may be used in applications such as
•
Low Total Harmonic Distortion :
≤0.02%
high speed integrators, fast D/A converters, sample
•
Low 1/f Noise Corner: 50 Hz
and hold circuits and many other circuits requiring low
•
Fast Settling Time to 0.01%: 2
μs
input offset voltage, low input bias current, high input
impedance, high slew rate and wide bandwidth. The
devices also exhibit low noise and offset voltage drift.
Typical Connection
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Copyright © 1998–2013, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.


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