LF353-N

SNOSBH3F – APRIL 1998 – REVISED MARCH 2013

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DC Electrical Characteristics

LF353-N

Symbol

Parameter

Conditions

Units

MIn

Typ

Max

VOS

Input Offset Voltage

RS=10kΩ, TA=25°C

5

10

mV

Over Temperature

13

mV

ΔVOS/ΔT

Average TC of Input Offset Voltage

RS=10 kΩ

10

μV/°C

IOS

Input Offset Current

Tj=25°C

(1) (2)

25

100

pA

Tj≤70°C

4

nA

IB

Input Bias Current

Tj=25°C

(1) (2)

50

200

pA

Tj≤70°C

8

nA

RIN

Input Resistance

Tj=25°C

1012

Ω

AVOL

Large Signal Voltage Gain

VS=±15V, TA=25°C

25

100

V/mV

VO=±10V, RL=2 kΩ

Over Temperature

15

V/mV

VO

Output Voltage Swing

VS=±15V, RL=10kΩ

±12

±13.5

V

VCM

Input Common-Mode Voltage

VS=±15V

±11

+15

V

Range

−12

V

CMRR

Common-Mode Rejection Ratio

RS≤ 10kΩ

70

100

dB

PSRR

Supply Voltage Rejection Ratio

See(3)

70

100

dB

IS

Supply Current

3.6

6.5

mA

(1)

These specifications apply for VS=±15V and 0°C≤TA≤+70°C. VOS, IBand IOS are measured at VCM=0.

(2)

The input bias currents are junction leakage currents which approximately double for every 10°C increase in the junction temperature,

Tj. Due to the limited production test time, the input bias currents measured are correlated to junction temperature. In normal operation

the junction temperature rises above the ambient temperature as a result of internal power dissipation, PD. Tj=TA+θjA PD where θjA is the

thermal resistance from junction to ambient. Use of a heat sink is recommended if input bias current is to be kept to a minimum.

(3)

Supply voltage rejection ratio is measured for both supply magnitudes increasing or decreasing simultaneously in accordance with

common practice. VS = ±6V to ±15V.

AC Electrical Characteristics

(1)

LF353-N

Symbol

Parameter

Conditions

Units

Min

Typ

Max

Amplifier to Amplifier Coupling

TA=25°C, f=1 Hz−20 kHz

−120

dB

(Input Referred)

SR

Slew Rate

VS=±15V, TA=25°C

8.0

13

V/

μs

GBW

Gain Bandwidth Product

VS=±15V, TA=25°C

2.7

4

MHz

en

Equivalent Input Noise Voltage

TA=25°C, RS=100Ω, f=1000 Hz

16

nV/

√Hz

in

Equivalent Input Noise Current

Tj=25°C, f=1000 Hz

0.01

pA/

√Hz

THD

Total Harmonic Distortion

AV=+10, RL=10k, VO=20Vp−p,

<0.02

%

BW=20 Hz-20 kHz

(1)

These specifications apply for VS=±15V and 0°C≤TA≤+70°C. VOS, IBand IOS are measured at VCM=0.

4

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