4

CDCM1802

SCAS759C – APRIL 2004 – REVISED JULY 2017

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Copyright © 2004–2017, Texas Instruments Incorporated

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

VDD

Supply voltage

–0.3

3.8

V

VI

Input voltage

–0.2

(VDD + 0.2)

V

VO

Output voltage

–0.2

(VDD + 0.2)

V

Yn, Yn, IOSD

Differential short circuit current

Continuous

TJ

Maximum junction temperature

125

125

°C

Tstg

Storage temperature

−65

150

°C

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±3000

V

Charged-device model (CDM), per JEDEC specification JESD22-

C101(2)

±1500

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

VDD

Supply voltage

3

3.3

3.6

V

VDD

Supply voltage (only functionality)

2.375

3.6

V

TA

Operating free-air temperature

–40

85

°C

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

6.4 Thermal Information

THERMAL METRIC(1)

CDCM1802

UNIT

RGT (VQFN)

16 PINS

RθJA

Junction-to-ambient thermal resistance

48.4

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

66.9

°C/W

RθJB

Junction-to-board thermal resistance

22.5

°C/W

ψJT

Junction-to-top characterization parameter

1.7

°C/W

ψJB

Junction-to-board characterization parameter

22.5

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

5.8

°C/W