TPS65160, TPS65160A

SLVS566C – MARCH 2005 – REVISED MARCH 2013

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ELECTRICAL CHARACTERISTICS (continued)

VIN = 12 V, SUP = VIN, EN1 = EN2 = VIN, VS = 15 V, VLOGIC = 3.3 V, TA = –40°C to 85°C, typical values are at TA = 25°C

(unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

INTERNAL OSCILLATOR

FREQ = high

600

750

900

fOSC

Oscillator frequency

kHz

FREQ = low

400

500

600

BOOST CONVERTER (VS)

TPS65160

20

V

VS

Output voltage range

TPS65160A

17.5

V

VFB

Feedback regulation voltage

1.136

1.146

1.156

V

IFB

Feedback input bias current

10

100

nA

N-MOSFET on-resistance (Q1)

ISW = 500 mA

100

185

m

Ω

rDS(on)

P-MOSFET on-resistance (Q2)

ISW = 200 mA

10

16

Ω

IMAX

Maximum P-MOSFET peak switch current

1

A

ILIM

N-MOSFET switch current limit (Q1)

2.8

3.5

4.2

A

Ileak

Switch leakage current

VSW = 15 V

1

10

µA

TPS65160

VOUT rising

22

23

24.5

V

Vovp

Overvoltage protection

TPS65160A

VOUT rising

18

19.5

20.5

V

10.6 V

≤ Vin ≤ 11.6 V

Line regulation

0.0008

%/V

at 1 mA

Load regulation

0.03

%/A

GATE DRIVE (GD)

VGD

Gate drive threshold(1)

VFB rising

Vs-12%

Vs-8%

Vs-4%

V

VOL

GD output low voltage

I(sink) = 500 µA

0.3

V

GD output leakage current

VGD = 20 V

0.05

1

µA

STEP-DOWN CONVERTER (VLOGIC)

VLOGIC

Output voltage range

1.8

5

V

VFBB

Feedback regulation voltage

1.195

1.213

1.231

V

IFBB

Feedback input bias current

10

100

nA

rDS(ON)

N-MOSFET on-resistance (Q1)

ISW = 500 mA

175

300

m

Ω

ILIM

N-MOSFET switch current limit (Q1)

2

2.6

3.3

A

Ileak

Switch leakage current

VSW = 0 V

1

10

µA

10.6 V

≤ VIN ≤ 11.6 V

Line regulation

0.0018

%/V

at 1 mA

Load regulation

0.037

%/A

(1)

The GD signal is latched low when the main boost converter output VS is within regulation. The GD signal is reset when the input

voltage or enable of the boost converter is cycled low.

4

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