Nexperia

PDTC143X/123J/143Z/114Y/124XQB-Q

series

50 V, 100 mA NPN resistor-equipped transistors

Symbol

Parameter

Conditions

Min

Typ

Max Unit

bias resistor 1 (input)

PDTC143XQB-Q

3.3

4.7

6.1

kΩ

PDTC123JQB-Q

1.54

2.2

2.86

kΩ

PDTC143ZQB-Q

3.3

4.7

6.1

kΩ

PDTC114YQB-Q

7

10

13

kΩ

R1

PDTC124XQB-Q

[1]

15.4

22

28.6

kΩ

bias resistor ratio

PDTC143XQB-Q

1.7

2.13

2.6

PDTC123JQB-Q

17

21

26

PDTC143ZQB-Q

8

10

12

PDTC114YQB-Q

3.7

4.7

5.7

R2/R1

PDTC124XQB-Q

[1]

1.7

2.13

2.6

fT

transition frequency

VCE = 5 V; IC = 10 mA; f = 100 MHz

[2] -

230

-

MHz

Cc

collector capacitance

VCB = 10 V; IE = ie = 0 A; f = 1 MHz

-

-

2.5

pF

[1] See "Section 11: Test information" for resistor calculation and test conditions

[2] Characteristics of built-in transistor

IC (mA)

10-1

102

10

1

006aac841

102

10

103

hFE

1

(1)

(2)

(3)

VCE = 5 V

(1) Tamb = 100 °C

(2) Tamb = 25 °C

(3) Tamb = -40 °C

Fig. 4. PDTC143XQB-Q: DC current gain as a function

of collector current; typical values

VCE (V)

0

5

4

2

3

1

aaa-018579

0.04

0.06

0.02

0.08

0.1

IC

(A)

0

0.70 mA

0.63 mA

0.56 mA

IB = 0.07 mA

0.14 mA

0.21 mA

0.28 mA

0.35 mA

0.42 mA

0.49 mA

Tamb = 25 °C

Fig. 5. PDTC143XQB-Q: Collector current as a function

of collector-emitter voltage; typical values

PDTC143X_TO_124XQB-Q_SER

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©

Nexperia B.V. 2021. All rights reserved

Product data sheet

Rev. 1 — 1 October 2021

6 / 20