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LM5008AMM/NOPB bảng dữ liệu(PDF) 4 Page - Texas Instruments

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Giải thích chi tiết về linh kiện  LM5008A 95-V, 350-mA, Constant On-Time DC/DC Buck Switching Regulator
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LM5008A
SNVS583H – MARCH 2009 – REVISED OCTOBER 2018
www.ti.com
Product Folder Links: LM5008A
Submit Documentation Feedback
Copyright © 2009–2018, Texas Instruments Incorporated
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1)
MIN
MAX
UNIT
VIN to GND
–0.3
100
V
BST to GND
–0.3
114
V
SW to GND (steady-state)
–1
V
BST to VCC
100
V
BST to SW
14
V
VCC to GND
14
V
All other inputs to GND
–0.3
7
V
Storage temperature, Tstg
–55
150
°C
(1)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2)
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.2 ESD Ratings
VALUE
UNIT
V(ESD)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
±2000
V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2)
±750
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
UNIT
VIN
6
95
V
Operating junction temperature
–40
125
°C
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
6.4 Thermal Information
THERMAL METRIC(1)
LM5008A
UNIT
DGK (VSSOP)
NGU (WSON)
8 PINS
8 PINS
RθJA
Junction-to-ambient thermal resistance
139.7
42
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
51.2
27.6
°C/W
RθJB
Junction-to-board thermal resistance
70.5
18.5
°C/W
ψJT
Junction-to-top characterization parameter
3.4
0.3
°C/W
ψJB
Junction-to-board characterization parameter
69.5
18.5
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
—
4.3
°C/W



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