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LM3501 bảng dữ liệu(PDF) 3 Page - Texas Instruments

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Giải thích chi tiết về linh kiện  LM3501 Synchronous Step-up DC/DC Converter for White LED Applications
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LM3501 bảng dữ liệu(HTML) 3 Page - Texas Instruments

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LM3501
www.ti.com
SNVS230C – DECEMBER 2003 – REVISED MAY 2013
PIN DESCRIPTIONS
Pin
Name
Function
A1
AGND
Analog ground.
B1
VIN
Analog and Power supply input.
C1
VOUT
PMOS source connection for synchronous rectification.
C2
VSW
Switch pin. Drain connections of both NMOS and PMOS power devices.
C3
GND
Power Ground.
B3
FB
Output voltage feedback connection.
A3
CNTRL
Analog LED current control.
A2
SHDN
Shutdown control pin.
AGND (pin A1): Analog ground pin
The analog ground pin should tie directly to the GND pin.
VIN (pin B1): Analog and Power supply pin
Bypass this pin with a capacitor, as close to the device as possible, connected between the
VIN and GND pins.
VOUT (pin C1): Source connection of internal PMOS power device
Connect the output capacitor between the VOUT and GND pins as close as possible to the
device.
VSW (pin C2): Drain connection of internal NMOS and PMOS switch devices
Keep the inductor connection close to this pin to minimize EMI radiation.
GND (pin C3): Power ground pin
Tie directly to ground plane.
FB (pin B3): Output voltage feedback connection
Set the primary White LED network current with a resistor from the FB pin to GND. Keep the
current setting resistor close to the device and connected between the FB and GND pins.
CNTRL (pin A3): Analog control of LED current
A voltage above 125 mV will begin to regulate the LED current. Decreasing the voltage
below 75 mV will turn off the LEDs.
SHDN (pin A2): Shutdown control pin
Disable the device with a voltage less than 0.3V and enable the device with a voltage
greater than 1.1V. The white LED current can be controlled using a PWM signal at this pin.
There is an internal pull down on the SHDN pin, the device is in a normally off state.
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Copyright © 2003–2013, Texas Instruments Incorporated
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