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BSM50GD120DLC bảng dữ liệu(PDF) 2 Page - eupec GmbH

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BSM50GD120DLC bảng dữ liệu(HTML) 2 Page - eupec GmbH

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Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM50GD120DLC
Charakteristische Werte / Characteristic values
Transistor / Transistor
min.
typ.
max.
Einschaltverzögerungszeit (ind. Last)
IC = 50A, VCC = 600V
turn on delay time (inductive load)
VGE = ±15V, RG = 15Ω, Tvj = 25°C
td,on
-
0,05
-
µs
VGE = ±15V, RG = 15Ω, Tvj = 125°C
-
0,06
-
µs
Anstiegszeit (induktive Last)
IC = 50A, VCC = 600V
rise time (inductive load)
VGE = ±15V, RG = 15Ω, Tvj = 25°C
tr
-
0,05
-
µs
VGE = ±15V, RG = 15Ω, Tvj = 125°C
-
0,05
-
µs
Abschaltverzögerungszeit (ind. Last)
IC = 50A, VCC = 600V
turn off delay time (inductive load)
VGE = ±15V, RG = 15Ω, Tvj = 25°C
td,off
-
0,25
-
µs
VGE = ±15V, RG = 15Ω, Tvj = 125°C
-
0,3
-
µs
Fallzeit (induktive Last)
IC = 50A, VCC = 600V
fall time (inductive load)
VGE = ±15V, RG = 15Ω, Tvj = 25°C
tf
-
0,03
-
µs
VGE = ±15V, RG = 15Ω, Tvj = 125°C
-
0,07
-
µs
Einschaltverlustenergie pro Puls
IC = 50A, VCC = 600V, VGE = 15V
turn-on energy loss per pulse
RG = 15Ω, Tvj = 125°C, LS = 120nH
Eon
-
6,4
-
mWs
Abschaltverlustenergie pro Puls
IC = 50A, VCC = 600V, VGE = 15V
turn-off energy loss per pulse
RG = 15Ω, Tvj = 125°C, LS = 120nH
Eoff
-
6,2
-
mWs
Kurzschlußverhalten
tP ≤ 10µsec, VGE ≤ 15V, RG = 15Ω
SC Data
TVj≤125°C, VCC=900V, VCEmax=VCES -LsCE ·dI/dt
ISC
-
400
-
A
Modulinduktivität
stray inductance module
LsCE
-
60
-
nH
Modul Leitungswiderstand, Anschlüsse – Chip
module lead resistance, terminals – chip
TC=25°C
RCC‘+EE‘
-
4,4
-
m
Ω
Charakteristische Werte / Characteristic values
Diode / Diode
min.
typ.
max.
Durchlaßspannung
IF = 50A, VGE = 0V, Tvj = 25°C
VF
-
1,8
2,3
V
forward voltage
IF = 50A, VGE = 0V, Tvj = 125°C
-
1,7
2,2
V
Rückstromspitze
IF = 50A, - diF/dt = 1300A/µsec
peak reverse recovery current
VR = 600V, VGE = -15V, T vj = 25°C
IRM
-52
-
A
VR = 600V, VGE = -15V, T vj = 125°C
-66
-
A
Sperrverzögerungsladung
IF = 50A, - diF/dt = 1300A/µsec
recovered charge
VR = 600V, VGE = -15V, T vj = 25°C
Qr
-
5,1
-
µAs
VR = 600V, VGE = -15V, T vj = 125°C
-
10,7
-
µAs
Abschaltenergie pro Puls
IF = 50A, - diF/dt = 1300A/µsec
reverse recovery energy
VR = 600V, VGE = -15V, T vj = 25°C
Erec
-
1,9
-
mWs
VR = 600V, VGE = -15V, T vj = 125°C
-
4
-
mWs
2(8)
Seriendatenblatt_BSM50GD120DLC.xls



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