BSM50GD120DLC datasheet(1/8 Pages) EUPEC

tên linh kiện	BSM50GD120DLC

Giải thích chi tiết về linh kiện	Technische Information / Technical Information

PDF	8 Pages

Scroll/Zoom	100%

nhà sản xuất	EUPEC [eupec GmbH]

Trang chủ	http://www.eupec.com

Logo

1 / 8 page

Technische Information / Technical Information

IGBT-Module

IGBT-Modules

BSM50GD120DLC

Höchstzulässige Werte / Maximum rated values

Elektrische Eigenschaften / Electrical properties

Kollektor-Emitter-Sperrspannung

collector-emitter voltage

VCES

1200

V

Kollektor-Dauergleichstrom

TC = 80 °C

IC,nom.

50

A

DC-collector current

TC = 25 °C

IC

85

A

Periodischer Kollektor Spitzenstrom

repetitive peak collector current

tP = 1 ms, TC = 80°C

ICRM

100

A

Gesamt-Verlustleistung

total power dissipation

TC=25°C, Transistor

Ptot

350

W

Gate-Emitter-Spitzenspannung

gate-emitter peak voltage

VGES

+/- 20V

V

Dauergleichstrom

DC forward current

IF

50

A

Periodischer Spitzenstrom

repetitive peak forw. current

tP = 1 ms

IFRM

100

A

Grenzlastintegral der Diode

I

2t - value, Diode

VR = 0V, tp = 10ms, TVj = 125°C

I

2t

430

A

2s

Isolations-Prüfspannung

insulation test voltage

RMS, f = 50 Hz, t = 1 min.

VISOL

2,5

kV

Charakteristische Werte / Characteristic values

Transistor / Transistor

min.

typ.

max.

Kollektor-Emitter Sättigungsspannung

IC = 50A, VGE = 15V, Tvj = 25°C

VCE sat

-

2,1

2,6

V

collector-emitter saturation voltage

IC = 50A, VGE = 15V, Tvj = 125°C

-

2,4

2,9

V

Gate-Schwellenspannung

gate threshold voltage

IC = 2mA, VCE = VGE, Tvj = 25°C

VGE(th)

4,5

5,5

6,5

V

Gateladung

gate charge

VGE = -15V...+15V

QG

-

0,53

-

µC

Eingangskapazität

input capacitance

f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V

Cies

-

3,3

-

nF

Rückwirkungskapazität

reverse transfer capacitance

f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V

Cres

-

0,21

-

nF

Kollektor-Emitter Reststrom

VCE = 1200V, VGE = 0V, Tvj = 25°C

ICES

-2

84

µA

collector-emitter cut-off current

VCE = 1200V, VGE = 0V, Tvj = 125°C

-

200

-

µA

Gate-Emitter Reststrom

gate-emitter leakage current

VCE = 0V, VGE = 20V, Tvj = 25°C

IGES

-

400

nA

prepared by: Mark Münzer

date of publication: 09.09.1999

approved by: M. Hierholzer

revision: 2

1(8)

Seriendatenblatt_BSM50GD120DLC.xls

Số phần tương tự - BSM50GD120DLC

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Siemens Semiconductor G...	BSM50GD120DN2	126Kb / 9P	IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes)
	BSM50GD120DN2E3226	132Kb / 9P	IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate)
	BSM50GD120DN2G	182Kb / 9P	IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes)

More results

Mô tả tương tự - BSM50GD120DLC

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
eupec GmbH	FD800R33KF2C-K	307Kb / 8P	Technische Information / technical information
	FZ300R12KE3G	288Kb / 8P	Technische Information / technical information
	FD200R12KE3	172Kb / 9P	Technische Information / technical information
	FS300R12KE3	249Kb / 8P	Technische Information / technical information
	BSM150GB120DLC	90Kb / 8P	Technische Information / Technical Information
	FF800R12KE3	146Kb / 9P	Technische Information / technical information
Infineon Technologies A...	DDB6U205N16L	285Kb / 7P	Technische Information / Technical Information rev.2
	FS225R12KE3	576Kb / 9P	Technische Information / Technical Information 2013-02-18 revision:3.1
	DD400S45KL3_B5	610Kb / 7P	Technische Information / Technical Information 2013-07-29 revision:3.0
	DF900R12IP4DV	1Mb / 9P	Technische Information / Technical Information 2014-04-28 revision:2.0

More results

BSM50GD120DLC bảng dữ liệu(PDF) 1 Page - eupec GmbH

BSM50GD120DLC bảng dữ liệu(HTML) 1 Page - eupec GmbH

Số phần tương tự - BSM50GD120DLC

Mô tả tương tự - BSM50GD120DLC

Html Pages

1 2 3 4 5 6 7 8

bảng dữ liệu tải về

Link URL