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M65KG256AB bảng dữ liệu(PDF) 32 Page - STMicroelectronics

tên linh kiện M65KG256AB
Giải thích chi tiết về linh kiện  256Mbit (4 Banks x 4M x 16) 1.8V Supply, 133MHz Clock Rate, DDR Low Power SDRAM
PDF  51 Pages
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nhà sản xuất  STMICROELECTRONICS [STMicroelectronics]
Trang chủ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M65KG256AB bảng dữ liệu(HTML) 32 Page - STMicroelectronics

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7 DC and AC parameters
M65KG256AB
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Figure 8.
Read followed by Read in a Different Bank
1.
If the consecutive Read operation targets an active row, the second READ command must be issued after a minimum
delay of tCK to interrupt the previous Read operation.
2.
If the consecutive Read operation targets an idle row, precharge the bank (PRE) without interrupting the previous Read
operation. tRP after the PRE command, issue the ACT command. The consecutive READ command can be issued tRCD
after the ACT command.
Figure 9.
Read with Auto Precharge
ACT
ACT
NOP
Command
K
K
DOA0 DOA1
UDQS/
LDQS
DQ0-DQ15
DOB0 DOB1
ai11206
Note: 1. Burst Length = 4
2. CAS Latency = 3
Row 0
Address
BA0-BA1
NOP
Row 1
DOB2
Bank A
Active
Read from
Bank A
Data Read from
Bank A
Data Read from
Bank D
DOB3
READ
READ
NOP
Column A Column B
Bank D
Active
Read from
Bank D
Read from
Column A
Read from
Column B
tRCD
ACT
READA
NOP
Command
K
K
DO0 DO1
UDQS, LDQS
DQ0-DQ15
DO2 DO3
ai10586
Note: Burst Length = 2
tRCD
ACT
tRPD
tRAS
tRP (min)
tAC
tDQSCK
Start of
Internal
Auto Precharge cycle



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